journal article·2019-09-04

Spark Plasma Sintered Bulk Nanocomposites of Bi2Te2.7Se0.3 Nanoplates Incorporated Ni Nanoparticles with Enhanced Thermoelectric Performance

Bingsheng Du, Xiaofang Lai, Qiulin Liu, Haitao Liu, Jing Wu, Jiao Liu, Zhihua Zhang, Yanzhong Pei, Huaizhou Zhao, Jikang Jian

ACS Applied Materials & Interfaces· Volume 11· Issue 35
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Abstract

Bi2Te3-based compounds are important near room temperature thermoelectric materials with commercial applications in thermoelectric modules. However, new routes leading to improved thermoelectric performance are highly desirable. Incorporation of superparamagnetic nanoparticles was recently proposed as a means to promote the thermoelectric properties of materials, but its feasibility has rarely been examined in mainstream thermoelectric materials. In this study, high quality single-crystalline Bi2Te2.7Se0.3 nanoplates and Ni nanoparticles were successfully synthesized by solvothermal and thermal decomposition methods, respectively. Bulk nanocomposites consisting of Bi2Te2.7Se0.3 nanoplates and superparamagnetic Ni nanoparticles were prepared by spark plasma sintering. It was found that incorporation of Ni nanoparticles simultaneously increased the carrier concentration and provided additional scattering centers, which resulted in enlarged electric conductivities and Seebeck coefficients. The greatly improved ZT was achieved due to the increase in power factor. Spark plasma sintered bulk nanocomposites of Bi2Te2.7Se0.3 nanoplates incorporated by 0.4 mol %Ni nanoparticles (in molar ratio) showed a figure-of-merit ZT of 0.66 at 425 K, equivalent to 43% increase when compared to pure Bi2Te2.7Se0.3 nanoplates. The results revealed that incorporation of magnetic nanoparticles could be an effective approach for promoting the thermoelectric performance of conventional semiconductors.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal Radiation and Cooling Technologies · Advanced Thermodynamics and Statistical Mechanics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Physics and Optoelectronic Engineering College, Guangdong University of Technology, Guangzhou 510006, China

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

School of Physical Science and Technology, Xinjiang University, Urumqi 830046, China

Liaoning Key Materials Laboratory for Railway, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China

Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, School of Materials Science and Engineering, Tongji University, 4800 Caoan Road, Shanghai 201804, China

Funding

National Natural Science Foundation of China

References (37)

Show source-provided references
1. 10.1039/C1EE02497C10.1039/C1EE02497C ↗
2. 10.1039/C7TC04573E10.1039/C7TC04573E ↗
3. 10.1002/adma.20060052710.1002/adma.200600527 ↗
4. 10.1039/C8NR07112H10.1039/C8NR07112H ↗
5. 10.1021/nl202935k10.1021/nl202935k ↗
6. 10.1039/C8TA00525G10.1039/C8TA00525G ↗
7. 10.1016/j.scriptamat.2017.11.04510.1016/j.scriptamat.2017.11.045 ↗
8. 10.1016/j.jallcom.2017.10.01610.1016/j.jallcom.2017.10.016 ↗
9. 10.1016/j.nanoen.2017.10.03410.1016/j.nanoen.2017.10.034 ↗
10. 10.1063/1.503442710.1063/1.5034427 ↗
11. 10.1021/acsami.7b0147310.1021/acsami.7b01473 ↗
12. 10.1016/j.apsusc.2017.06.26010.1016/j.apsusc.2017.06.260 ↗
13. 10.1002/aenm.20110014910.1002/aenm.201100149 ↗
14. 10.1039/c3ta13456c10.1039/c3ta13456c ↗
15. 10.1039/C4TA02532F10.1039/C4TA02532F ↗
16. 10.1016/j.nanoen.2013.07.00910.1016/j.nanoen.2013.07.009 ↗
17. 10.1063/1.290096010.1063/1.2900960 ↗
18. 10.1021/nl100804a10.1021/nl100804a ↗
19. 10.1038/nnano.2016.18210.1038/nnano.2016.182 ↗
20. 10.1038/nature2366710.1038/nature23667 ↗
21. 10.1021/acsnano.6b0115610.1021/acsnano.6b01156 ↗
22. 10.1021/acs.nanolett.5b0396610.1021/acs.nanolett.5b03966 ↗
23. 10.1039/C8NR09101C10.1039/C8NR09101C ↗
24. 10.1021/cm902007g10.1021/cm902007g ↗
25. 10.1002/anie.20130941610.1002/anie.201309416 ↗
26. 10.1016/j.nantod.2008.10.00210.1016/j.nantod.2008.10.002 ↗
27. Rhoderick, E. H.; Williams, R. H. Metal–Semiconductor Contacts, 2nd ed. Clarendon Press, 1988; pp 10–15.
28. 10.1021/nn400908b10.1021/nn400908b ↗
29. 10.1103/PhysRev.133.A114310.1103/PhysRev.133.A1143 ↗
30. Wang S. · J. Mater. Chem. · 2012 · 22 · 1
31. 10.1039/C8CP05793A10.1039/C8CP05793A ↗
32. 10.1002/pssb.222084022610.1002/pssb.2220840226 ↗
33. 10.1016/j.nanoen.2017.07.01110.1016/j.nanoen.2017.07.011 ↗
34. 10.1002/anie.20161204110.1002/anie.201612041 ↗
35. 10.1063/1.490824410.1063/1.4908244 ↗
36. 10.1016/j.scriptamat.2019.01.04610.1016/j.scriptamat.2019.01.046 ↗
37. 10.1021/acsami.7b1416610.1021/acsami.7b14166 ↗