DataVXACS Applied Materials & InterfacesPaper
journal article·2018-03-28Open access

Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons

Vikram Passi, Amit Gahoi, Boris V. Senkovskiy, Danny Haberer, Felix R. Fischer, Alexander Grüneis, Max C. Lemme

ACS Applied Materials & Interfaces· Volume 10· Issue 12
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Source abstract

Abstract

We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. The large area transfer process holds the promise of scalable device fabrication with atomically precise nanoribbons. The channels of the FETs are approximately 30 times longer than the average nanoribbon length of 30 nm to 40 nm. The density of the GNRs is high, so that transport can be assumed well-above the percolation threshold. The long channel transistors exhibit a maximum ION/ IOFF current ratio of 87.5.
Source: europepmc · Quality: candidate unverified · Source record ↗

Research context

NanomaterialsElectronic materials

OpenAlex topics: Graphene research and applications · Carbon Nanotubes in Composites · Graphene and Nanomaterials Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Strasse 25, Aachen, Germany

Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Strasse 2, Aachen, Germany

II. Physikalisches Institut, Universität zu Köln, Zülpicher Strasse 77, Köln, Germany

Department of Chemistry, University of California Berkeley, Berkeley, California 94720, United States

Funding

European Regional Development Fund · Basic Energy Sciences · Deutsche Forschungsgemeinschaft · FP7 Ideas: European Research Council · H2020 European Research Council

References (33)

Show source-provided references
1. 10.1103/PhysRevB.54.1795410.1103/PhysRevB.54.17954 ↗
2. Dresselhaus M. S. · 1996
3. 10.1109/LED.2007.90168010.1109/LED.2007.901680 ↗
4. 10.1103/PhysRevLett.97.21680310.1103/PhysRevLett.97.216803 ↗
5. 10.1021/nl061703310.1021/nl0617033 ↗
6. 10.1103/PhysRevLett.98.20680510.1103/PhysRevLett.98.206805 ↗
7. 10.1016/j.physe.2007.06.02010.1016/j.physe.2007.06.020 ↗
8. 10.1126/science.115087810.1126/science.1150878 ↗
9. 10.1103/PhysRevLett.100.20680310.1103/PhysRevLett.100.206803 ↗
10. 10.1038/nature0787210.1038/nature07872 ↗
11. 10.1038/nature0791910.1038/nature07919 ↗
12. 10.1038/nature0921110.1038/nature09211 ↗
13. 10.1063/1.485511610.1063/1.4855116 ↗
14. 10.1038/s41467-017-00734-x10.1038/s41467-017-00734-x ↗
15. 10.1063/1.500698410.1063/1.5006984 ↗
16. 10.1038/2995410.1038/29954 ↗
17. 10.1038/nnano.2012.25710.1038/nnano.2012.257 ↗
18. 10.1126/science.aab275010.1126/science.aab2750 ↗
19. 10.1002/adma.20140528910.1002/adma.201405289 ↗
20. Tang J. · 2016 · 5.1.110.1109/IEDM.2016.7838350 ↗
21. 10.1021/nn302768h10.1021/nn302768h ↗
22. 10.1002/smll.20120315410.1002/smll.201203154 ↗
23. 10.1103/PhysRevB.83.04540110.1103/PhysRevB.83.045401 ↗
24. 10.1021/ja502764d10.1021/ja502764d ↗
25. 10.1039/C2CS35335K10.1039/C2CS35335K ↗
26. 10.1103/PhysRevLett.108.21680110.1103/PhysRevLett.108.216801 ↗
27. 10.1002/aelm.20160049010.1002/aelm.201600490 ↗
28. 10.1021/acs.nanolett.7b0014710.1021/acs.nanolett.7b00147 ↗
29. 10.1103/PhysRevB.81.20542610.1103/PhysRevB.81.205426 ↗
30. 10.1103/PhysRevLett.89.10680110.1103/PhysRevLett.89.106801 ↗
31. 10.1063/1.492140010.1063/1.4921400 ↗
32. 10.1038/s41598-017-05069-710.1038/s41598-017-05069-7 ↗
33. 10.1016/j.sse.2016.07.00810.1016/j.sse.2016.07.008 ↗