journal article·2012-12-26

Field Emission Properties of Gold Nanoparticle-Decorated ZnO Nanopillars

Yuan-Ming Chang, Man-Ling Lin, Tung-Yen Lai, Hsin-Yi Lee, Chih-Ming Lin, Yew-Chung Sermon Wu, Jenh-Yih Juang

Publisher page

Abstract

The structural and optoelectronic properties of ZnO nanopillars (ZnO-NPs) grown on Si substrates by the vapor transport deposition method were investigated. In particular, by varying the deposition duration and hence the morphology of the vertically aligned ZnO-NPs, the resultant field emission characteristics were systematically compared. In addition to identifying the advantageous field emission properties exhibited in the pencil-like ZnO-NPs, we observed that by adhering Au nanoparticles on the surface of the ZnO-NPs the turn-on field and the maximum current density can be drastically improved from 3.15 V/μm and 0.44 mA/cm(2) at 5 V/μm for the best ZnO-NPs to 2.65 V/μm and 2.11 mA/cm(2) at 5 V/μm for Au/ZnO-NPs, respectively. The enhancement of field emission characteristics that resulted from Au-nanoparticle decoration is discussed on the basis of charge-transfer-induced band structure modifications.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: ZnO doping and properties · Quantum Dots Synthesis And Properties · Gold and Silver Nanoparticles Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan

Department of Applied Science, National Hsinchu University of Education, Hsinchu 300, Taiwan

References (55)

Show source-provided references
1. Li Yu. · Coord. Chem. Rev. · 2011 · 255 · 35710.1016/j.ccr.2010.09.015 ↗
2. Weng W. Y. · ACS Appl. Mater. Interfaces · 2011 · 3 · 16210.1021/am100746c ↗
3. Lupan O. · ACS Appl. Mater. Interfaces · 2010 · 2 · 208310.1021/am100334c ↗
4. Li Y. · Adv. Funct. Mater. · 2009 · 19 · 246710.1002/adfm.200801857 ↗
5. Guan J. · RSC Adv. · 2012 · 2 · 770810.1039/c2ra20564e ↗
6. Lee C. J. · Appl. Phys. Lett. · 2002 · 81 · 364810.1063/1.1518810 ↗
7. Xu C. X. · Appl. Phys. Lett. · 2003 · 83 · 380610.1063/1.1625774 ↗
8. Li Y. B. · Appl. Phys. Lett. · 2004 · 84 · 360310.1063/1.1738174 ↗
9. Zhao Q. · Appl. Phys. Lett. · 2005 · 86 · 20311510.1063/1.1931831 ↗
10. Xu C. X. · Appl. Phys. Lett. · 2006 · 88 · 16192110.1063/1.2198095 ↗
11. Premkumar T. · ACS Appl. Mater. Interfaces · 2010 · 2 · 286310.1021/am100539q ↗
12. Bekermann D. · Cryst. Growth Des. · 2010 · 10 · 201110.1021/cg1002012 ↗
13. Barreca D. · Chem. Phys. Lett. · 2010 · 500 · 28710.1016/j.cplett.2010.10.030 ↗
14. Barreca D. · CrystEngComm · 2010 · 12 · 341910.1039/c0ce00139b ↗
15. Simon Q. · Nanotechnology · 2012 · 23 · 02550210.1088/0957-4484/23/2/025502 ↗
16. Bekermann D. · ChemPhysChem · 2010 · 11 · 233710.1002/cphc.201000333 ↗
17. Simon Q. · Int. J. Hydrogen Energy · 2011 · 36 · 1552710.1016/j.ijhydene.2011.09.045 ↗
18. Simon Q. · J. Mater. Chem. · 2012 · 22 · 1173910.1039/c2jm31589k ↗
19. Chang Y.-M. · J. Phys. Chem. C · 2012 · 116 · 833210.1021/jp301350h ↗
20. Xu C. X. · Appl. Phys. Lett. · 2004 · 84 · 154010.1063/1.1651328 ↗
21. Ye C. · J. Phys. Chem. C · 2007 · 111 · 1267310.1021/jp073928n ↗
22. Daniel M. C. · Chem. Rev. · 2004 · 104 · 29310.1021/cr030698+ ↗
23. Wang X. · J. Phys. Chem. C · 2007 · 111 · 383610.1021/jp064118z ↗
24. Im J. · J. Phys. Chem. C · 2011 · 115 · 1051810.1021/jp202461f ↗
25. Zhao D. · Chem. Phys. Lett. · 2005 · 408 · 33510.1016/j.cplett.2005.04.038 ↗
26. Fan H. J. · Small · 2006 · 2 · 56110.1002/smll.200500331 ↗
27. Zhang Z. · J. Phys. Chem. C · 2007 · 111 · 1750010.1021/jp075296a ↗
28. Chang Y.-M. · ACS Appl. Mater. Interfaces · 2012 · 4 · 141110.1021/am201667m ↗
29. Zhang Z. · J. Phys. Chem. B · 2006 · 110 · 856610.1021/jp0568632 ↗
30. She J. · ACS Nano · 2008 · 2 · 201510.1021/nn800283u ↗
31. Fonoberov V. A. · Phys. Rev. B · 2004 · 70 · 19541010.1103/PhysRevB.70.195410 ↗
32. Kar A. · RSC Adv. · 2012 · 2 · 487910.1039/c2ra20150j ↗
33. Chiang T.-Y. · J. Alloys Compd. · 2011 · 509 · 562310.1016/j.jallcom.2011.02.093 ↗
34. Xue X.-Y. · J. Phys. Chem. C · 2010 · 114 · 1860710.1021/jp1070067 ↗
35. Chang Y.-M. · ACS Appl. Mater. Interfaces · 2011 · 3 · 441510.1021/am201062t ↗
36. Chang Y.-M. · RSC Adv. · 2012 · 2 · 1108910.1039/c2ra21817h ↗
37. Chang Y.-M. · Nanotechnology · 2010 · 21 · 38570510.1088/0957-4484/21/38/385705 ↗
38. Garces N. Y. · Appl. Phys. Lett. · 2002 · 81 · 62210.1063/1.1494125 ↗
39. Kong Y. C. · Appl. Phys. Lett. · 2001 · 78 · 40710.1063/1.1342050 ↗
40. Panigrahi S. · Nanoscale · 2011 · 3 · 233610.1039/c1nr10064e ↗
41. Jo S. H. · Appl. Phys. Lett. · 2003 · 83 · 482110.1063/1.1631735 ↗
42. Ramgir N. S. · Nanotechnology · 2006 · 17 · 273010.1088/0957-4484/17/11/003 ↗
43. Al-Tabbakh A. A. · ACS Nano · 2010 · 4 · 558510.1021/nn1008403 ↗
44. Li C. · J. Phys. Chem. C · 2007 · 111 · 1256610.1021/jp0737808 ↗
45. Kale V. S. · Phys. Chem. Chem. Phys. · 2012 · 14 · 461410.1039/c2cp40238f ↗
46. Pradhan D. · ACS Appl. Mater. Interfaces · 2009 · 4 · 78910.1021/am800220v ↗
47. Shen X.-P. · Nanotechnology · 2005 · 16 · 203910.1088/0957-4484/16/10/009 ↗
48. Zhang Y. · J. Phys. Chem. C · 2009 · 113 · 592010.1021/jp8100927 ↗
49. Liu J. · J. Phys. Chem. C · 2007 · 111 · 499010.1021/jp067782o ↗
50. Ahmad M. · ACS Appl. Mater. Interfaces · 2011 · 3 · 129910.1021/am200099c ↗
51. Cao B. · J. Phys. Chem. C · 2007 · 111 · 247010.1021/jp066661l ↗
52. Marathe S. K. · Nanotechnology · 2006 · 17 · 193210.1088/0957-4484/17/8/022 ↗
53. Zhang Z. · J. Phys. Chem. C · 2010 · 114 · 18910.1021/jp9087223 ↗
54. Wu L. · J. Phys. Chem. C · 2011 · 115 · 2456410.1021/jp207438s ↗
55. Wang, S.Fundamentals of Semiconductor Theory and Device Physics;Prentice-Hall Inc.:NJ, 1989; p131.