Selective Conversion from p-Type to n-Type of Printed Bottom-Gate Carbon Nanotube Thin-Film Transistors and Application in Complementary Metal–Oxide–Semiconductor Inverters
Abstract
Research context
OpenAlex topics: Nanowire Synthesis and Applications · Carbon Nanotubes in Composites · Organic Electronics and Photovoltaics
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Affiliations
Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, P.R. China
Shanghai Institute of Organic Chemistry, Chinese Academy of Sciences, Shanghai 200032, P.R. China
School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, P.R. China
Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren’ai Road, Suzhou, Jiangsu 215123, P.R. China
Beijing Engineering Research Center of Printed Electronics, Beijing Institute of Graphic Communication, No.1 Xinghua Street, Daxing District, Beijing 102600, P.R. China
Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, P.R. China
Funding
Guangdong Science and Technology Department · Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China · Chinese Academy of Sciences · Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences · Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University · Priority Academic Program Development of Jiangsu Higher Education Institutions