Quasi-Epitaxial Growth of β-Ga2O3-Coated Wide Band Gap Semiconductor Tape for Flexible UV Photodetectors
Abstract
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques
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Affiliations
Advanced Semiconductor Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, 200240, Shanghai, China
Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Laboratory of Information Functional Materials and Devices, School of Science and State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
King Abdullah University of Science and Technology (KAUST), MMH Labs, Electrical and Computer Engineering, Thuwal, 23955-6900, Saudi Arabia
Funding
King Abdullah University of Science and Technology · National Natural Science Foundation of China · Gulf Cooperation Council