Activity Dependent Synaptic Plasticity Mimicked on Indium–Tin–Oxide Electric-Double-Layer Transistor

Juan Wen; Li Qiang Zhu; Yang Ming Fu; Hui Xiao; Li Qiang Guo; Qing Wan

doi:10.1021/acsami.7b13215

journal article·2017-10-25

Activity Dependent Synaptic Plasticity Mimicked on Indium–Tin–Oxide Electric-Double-Layer Transistor

Juan Wen, Li Qiang Zhu, Yang Ming Fu, Hui Xiao, Li Qiang Guo, Qing Wan

ACS Applied Materials & Interfaces· Volume 9· Issue 42

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Source abstract

Abstract

Ion coupling has provided an additional method to modulate electric properties for solid-state materials. Here, phosphorosilicate glass (PSG)-based electrolyte gated protonic/electronic coupled indium-tin-oxide electric-double-layer (EDL) transistors are fabricated. The oxide transistor exhibits good electrical performances due to an extremely strong proton gating behavior for the electrolyte. With interfacial electrochemical doping, channel conductances of the oxide EDL transistor can be regulated to different levels, corresponding to different initial synaptic weights. Thus, activity dependent synaptic responses such as excitatory postsynaptic current, paired-pulse facilitation, and high-pass filtering are discussed in detail. The proposed proton conductor gated oxide EDL synaptic transistors with activity dependent synaptic plasticities may act as fundamental building blocks for neuromorphic system applications.

Source: openalex_inverted_index · Quality: baseline

Research context

Energy storage Ceramics & glasses Electronic materials

OpenAlex topics: Advanced Memory and Neural Computing · Conducting polymers and applications · Neuroscience and Neural Engineering

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, Zhejiang, People’s Republic of China

Micro/Nano Science & Technology Center, Jiangsu University, Zhenjiang, 212013, Peoples Republic of China

University of Chinese Academy of Sciences, Beijing 100049, Peoples Republic of China

School of Electronic Science & Engineering, Nanjing University, Nanjing 210093, Jiangsu, Peoples Republic of China

Funding

Youth Innovation Promotion Association of the Chinese Academy of Sciences · Chinese Academy of Sciences · Natural Science Foundation of Zhejiang Province · Ningbo Municipal Science and Technology Innovative Research Team

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