journal article·2018-02-14

Investigation of Dual-Ion Beam Sputter-Instigated Plasmon Generation in TCOs: A Case Study of GZO

Vivek Garg, Brajendra S. Sengar, Vishnu Awasthi, Amitesh Kumar, Rohit Singh, Shailendra Kumar, C. Mukherjee, V. V. Atuchin, Shaibal Mukherjee

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Abstract

The use of the high free-electron concentration in heavily doped semiconductor enables the realization of plasmons. We report a novel approach to generate plasmons in Ga:ZnO (GZO) thin films in the wide spectral range of ∼1.87-10.04 eV. In the grown GZO thin films, dual-ion beam sputtering (DIBS) instigated plasmon is observed because of the formation of different metallic nanoclusters are reported. Moreover, formation of the nanoclusters and generation of plasmons are verified by field emission scanning electron microscope, electron energy loss spectra obtained by ultraviolet photoelectron spectroscopy, and spectroscopic ellipsometry analysis. Moreover, the calculation of valence bulk, valence surface, and particle plasmon resonance energies are performed, and indexing of each plasmon peaks with corresponding plasmon energy peak of the different nanoclusters is carried out. Further, the use of DIBS-instigated plasmon-enhanced GZO can be a novel mean to improve the performance of photovoltaic, photodetector, and sensing devices.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Ion-surface interactions and analysis · ZnO doping and properties · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Hybrid Nanodevice Research Group (HNRG), Electrical Engineering, Indian Institute of Technology (IIT) Indore, Indore 453552, Madhya Pradesh, India

Raja Ramanna Center for Advanced Technology, Indore 452013, India

Advanced Laser and Optics Division, Raja Ramanna Center for Advanced Technology, Indore 452013, India

Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India

Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia

Functional Electronics Laboratory, Tomsk State University, Tomsk 634050, Russia

Laboratory of Single Crystal Growth, South Ural State University, Chelyabinsk 454080, Russia

Funding

Council of Scientific and Industrial Research · University Grants Commission · Ministry of Electronics and Information technology · Board of Research in Nuclear Sciences · Russian Foundation for Basic Research · Department of Science and Technology, Ministry of Science and Technology · Tomsk State University · Ministry of Education and Science of the Russian Federation

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