Dendrite Integration Mimicked on Starch-Based Electrolyte-Gated Oxide Dendrite Transistors
Source abstract
Abstract
Emulation of dendrite integration on brain-inspired hardware devices is of great significance for neuromorphic engineering. Here, solution-processed starch-based electrolyte films are fabricated, demonstrating strong proton gating activities. Starch gated oxide dendrite transistors with multigates are fabricated, exhibiting good electrical performances. Most importantly, dendrite modulation, spatiotemporal dendrite integration, and linear/superlinear dendrite algorithm are demonstrated on the proposed dendrite transistor. Furthermore, a low energy consumption of ∼1.2 pJ is obtained for triggering a synaptic response on the dendrite transistor. Accordingly, the signal-to-noise ratio is still as high as ∼2.9, indicating a high sensitivity of ∼4.6 dB. Such artificial dendrite transistors have potential applications in brain-inspired neuromorphic platforms.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neural dynamics and brain function · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, Zhejiang, People’s Republic of China
School of Material Science & Engineering, Shanghai University, Shanghai 200444, People’s Republic of China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China
Funding
National Natural Science Foundation of China · Natural Science Foundation of Zhejiang Province · Chinese Academy of Sciences · Ningbo Science and Technology Innovation Team
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