DataVXACS Applied Materials & InterfacesPaper
journal article·2018-08-22

Phase-Engineering-Driven Enhanced Electronic and Optoelectronic Performance of Multilayer In2Se3 Nanosheets

Wei Feng, Feng Gao, Yunxia Hu, Mingjin Dai, He Liu, Lifeng Wang, PingAn Hu

ACS Applied Materials & Interfaces· Volume 10· Issue 33
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Source abstract

Abstract

Here, we report electronic and optoelectronic performance of multilayer In2Se3 are effectively regulated by phase engineering. The electron mobility is increased to 22.8 cm2 V–1 s–1 for β-In2Se3 FETs, which is 18 times higher than 1.26 cm2 V–1 s–1 of α-In2Se3 FETs. The enhanced electronic performance is attributed to larger carrier sheet density and lower contact resistance. Multilayer β-In2Se3 photodetector exhibits an ultrahigh responsivity of 8.8 × 104 A/W under 800 nm illumination, which is 574 times larger than 154.4 A/W of α-In2Se3 photodetector. Our results demonstrate phase-engineering is a valid way to tune and further optimize electronic and optoelectronic performance of multilayer In2Se3 nanodevices.
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Research context

NanomaterialsElectronic materials

OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemistry and Chemical Engineering, College of Science, Northeast Forestry University, Harbin 150040, China

Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology, Harbin 150080, China

Institute for Frontier Materials, Deakin University, 75 Pigdons Road, Waurn Ponds, Geelong, Victoria 3216, Australia

Funding

Ministry of Education of the People's Republic of China · China Postdoctoral Science Foundation · National Natural Science Foundation of China · State Key Laboratory of Robotics and System, Harbin Institute of Technology

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