Wafer-Size and Single-Crystal MoSe2 Atomically Thin Films Grown on GaN Substrate for Light Emission and Harvesting
Source abstract
Abstract
Two-dimensional (2D) atomic-layered semiconductors are important for next-generation electronics and optoelectronics. Here, we designed the growth of an MoSe2 atomic layer on a lattice-matched GaN semiconductor substrate. The results demonstrated that the MoSe2 films were less than three atomic layers thick and were single crystalline of MoSe2 over the entire GaN substrate. The ultrathin MoSe2/GaN heterojunction diode demonstrated ∼850 nm light emission and could also be used in photovoltaic applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory for Optoelectronics Materials and Technology, Sun Yat-sen University, Guangzhou 510275, China
School of Metallurgy and Environment, Central South University, Changsha 410083, China
Division of Engineering and Applied Science, California Institute of Technology, Pasadena, California 91125, United States
Funding
National Natural Science Foundation of China
References (37)
Show source-provided references
1. Pierret R. F. · 1996
2. 10.1016/0022-2313(84)90014-010.1016/0022-2313(84)90014-0 ↗
3. 10.1038/nnano.2012.19310.1038/nnano.2012.193 ↗
4. 10.1021/nl502961e10.1021/nl502961e ↗
5. 10.1002/adma.20150084610.1002/adma.201500846 ↗
6. 10.1039/C4NR02311K10.1039/C4NR02311K ↗
7. 10.1021/acsnano.5b0130110.1021/acsnano.5b01301 ↗
8. 10.1021/nl302635710.1021/nl3026357 ↗
9. 10.1038/nnano.2014.3510.1038/nnano.2014.35 ↗
10. 10.1021/acsnano.5b0128110.1021/acsnano.5b01281 ↗
11. 10.1038/nature1276310.1038/nature12763 ↗
12. 10.1063/1.493023410.1063/1.4930234 ↗
13. 10.1038/srep1859610.1038/srep18596 ↗
14. 10.1021/nn500480u10.1021/nn500480u ↗
15. 10.1016/j.snb.2015.01.12910.1016/j.snb.2015.01.129 ↗
16. 10.1063/1.490104810.1063/1.4901048 ↗
17. 10.1038/srep1510310.1038/srep15103 ↗
18. 10.1088/2053-1583/2/2/02400710.1088/2053-1583/2/2/024007 ↗
19. 10.1038/ncomms583610.1038/ncomms5836 ↗
20. 10.1116/1.58589710.1116/1.585897 ↗
21. 10.1021/acsnano.5b0800810.1021/acsnano.5b08008 ↗
22. 10.1021/nn501175k10.1021/nn501175k ↗
23. 10.1007/s12274-014-0417-z10.1007/s12274-014-0417-z ↗
24. 10.1088/0953-8984/14/38/20110.1088/0953-8984/14/38/201 ↗
25. 10.1002/adma.20150478910.1002/adma.201504789 ↗
26. 10.1364/OE.21.00490810.1364/OE.21.004908 ↗
27. 10.1021/acsami.6b0096110.1021/acsami.6b00961 ↗
28. 10.1002/andp.20160000610.1002/andp.201600006 ↗
29. 10.1103/PhysRevB.58.1289910.1103/PhysRevB.58.12899 ↗
30. 10.1021/nn502776h10.1021/nn502776h ↗
31. 10.1063/1.492123810.1063/1.4921238 ↗
32. Rabalais J. W. · 1977
33. 10.1021/jp711343410.1021/jp7113434 ↗
34. 10.1021/nl401544y10.1021/nl401544y ↗
35. 10.1039/C5RA24453F10.1039/C5RA24453F ↗
36. 10.1039/C5NR01275A10.1039/C5NR01275A ↗
37. 10.1063/1.491595110.1063/1.4915951 ↗