journal article·2016-12-07

Infrared Response and Optoelectronic Memory Device Fabrication Based on Epitaxial VO2 Film

Lele Fan, Yuliang Chen, Qianghu Liu, Shi Chen, Lei Zhu, Qiangqiang Meng, Baolin Wang, Qinfang Zhang, Hui Ren, Chongwen Zou

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Abstract

In this work, high-quality VO 2 epitaxial films were prepared on high-conductivity n-GaN (0001) crystal substrates via an oxide molecular beam epitaxy method. By fabricating a two-terminal VO 2 /GaN film device, we observed that the infrared transmittance and resistance of VO 2 films could be dynamically controlled by an external bias voltage. Based on the hysteretic switching effect of VO 2 in infrared range, an optoelectronic memory device was achieved. This memory device was operated under the “electrical writing–optical reading” mode, which shows promising applications in VO 2 -based optoelectronic device in the future.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Transition Metal Oxide Nanomaterials · Advanced Memory and Neural Computing · Gas Sensing Nanomaterials and Sensors

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology, Yancheng 224051, China

National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230029, China

Science and Technology on Electro-optical Information Security Control Laboratory, Tianjin 300300, China

School of Physical Science and Technology, Nanjing Normal University, Nanjing 210023, People’s Republic of China

Funding

Ministry of Education of the People's Republic of China · Ministry of Science and Technology of the People's Republic of China · Natural Science Foundation of Jiangsu Province · National Natural Science Foundation of China · Jiangsu Province · Key Laboratory of Neutron Physics, China Academy of Engineering Physics · Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology

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