Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium–Gallium–Zinc-Oxide Electric-Double-Layer Transistors
Source abstract
Abstract
In the biological nervous system, synaptic plasticity regulation is based on the modulation of ionic fluxes, and such regulation was regarded as the fundamental mechanism underlying memory and learning. Inspired by such biological strategies, indium-gallium-zinc-oxide (IGZO) electric-double-layer (EDL) transistors gated by aqueous solutions were proposed for synaptic behavior emulations. Short-term synaptic plasticity, such as paired-pulse facilitation, high-pass filtering, and orientation tuning, was experimentally emulated in these EDL transistors. Most importantly, we found that such short-term synaptic plasticity can be effectively regulated by alcohol (ethyl alcohol) and salt (potassium chloride) additives. Our results suggest that solution gated oxide-based EDL transistors could act as the platforms for short-term synaptic plasticity emulation.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Neural dynamics and brain function
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electronic Science & Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Funding
National Natural Science Foundation of China · Natural Science Foundation of Zhejiang Province
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