Ultralow Power Optoelectronic Memtransistors Based on Vertical WS₂/In₂Se₃ van der Waals Heterostructures

Memtransistors composed of 2D van der Waals (vdW) heterostructures are crucial for constructing artificial synaptic devices and realizing neuromorphic computing. The functional integration containing ultralow power, nonvolatile memory, and biomimetic synaptic behavior endows such devices with broad prospects. Here, we develop an optoelectronic memtransistor based on the WS 2 /In 2 Se 3 vdW heterostructure and realize significant optical and electrical synaptic properties, which can simulate both short-range plasticity (STP) and long-range plasticity (LTP) of biological synapses. Under optical stimulation, the device demonstrates an ultralow power consumption (only 7.7 aJ per spike) significantly lower than biological synapses, indicating the application potential in large-scale neuromorphic hardware. Combining optical and electrical stimuli, we can perform multiple logic operations by controlling the optical and electrical inputs of the WS 2 /In 2 Se 3 -based memtransistor. Besides, simulated recognition utilizing the Modified National Institute of Standards and Technology data set can achieve a recognition accuracy of 85.41%. Notably, this accuracy can remain above 80% even with the introduction of Gaussian noise. These results demonstrate the promising potential of WS 2 /In 2 Se 3 -based memtransistors in future neuromorphic computing.