Source abstract
Abstract
High Resolution Image Download MS PowerPoint Slide In pursuing high stability and power conversion efficiency for organic photovoltaics (OPVs), a sequential deposition (SD) approach to fabricate active layers with p–i–n structures (where p, i, and n represent the electron donor, mixed donor:acceptor, and electron acceptor regions, respectively, distinctively different from the bulk heterojunction (BHJ) structure) has emerged. Here, we present a novel approach that by incorporating two polymer donors, PBDBT-DTBT and PTQ-2F, and one small-molecule acceptor, BTP-3-EH-4Cl, into the active layer with sequential deposition, we formed a device with nanometer-scale twin p–i–n structured active layer. The twin p–i–n PBDBT-DTBT:PTQ-2F/BTP-3-EH-4Cl device involved first depositing a PBDBT-DTBT:PTQ-2F blend under layer and then a BTP-3-EH-4Cl top layer and exhibited an improved power conversion efficiency (PCE) value of 18.6%, as compared to the 16.4% for the control BHJ PBDBT-DTBT:PTQ-2F:BTP-3-EH-4Cl device or 16.6% for the single p–i–n PBDBT-DTBT/BTP-3-EH-4Cl device. The PCE enhancement resulted mainly from the twin p–i–n active layer’s multiple nanoscale charge carrier pathways that contributed to an improved fill factor and faster photocurrent generation based on transient absorption studies. The PBDBT-DTBT:PTQ-2F/BTP-3-EH-4Cl film possessed a vertical twin p–i–n morphology that was revealed through secondary ion mass spectrometry and synchrotron grazing-incidence small-angle X-ray scattering analyses. The thermal stability ( T 80 ) at 85 °C of the twin p–i–n PBDBT-DTBT:PTQ-2F/BTP-3-EH-4Cl device surpassed that of the single p–i–n PBDBT-DTBT/BTP-3-EH-4Cl devices (906 vs 196 h). This approach of providing a twin p–i–n structure in the active layer can lead to substantial enhancements in both the PCE and stability of organic photovoltaics, laying a solid foundation for future commercialization of the organic photovoltaics technology.
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Affiliations
Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Department of Materials Engineering, Ming Chi University of Technology, New Taipei City 243303, Taiwan
College of Engineering, Chang Gung University, Taoyuan 33302, Taiwan
Robinson Research Institute, Victoria University of Wellington, Wellington 6012, New Zealand
MacDiarmid Institute for Advanced Materials and Nanotechnology, Wellington 6012, New Zealand
The Dodd-Walls Centre for Photonic and Quantum TechnologiesUniversity of Otago, Denedin 9016, New Zealand
Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 300044, Taiwan
Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
Department of Materials Science and Engineering, National Taiwan University, Taipei 106319, Taiwan
National Synchrotron Radiation Research Center, Hsinchu 30010, Taiwan
Department of Molecular Science and Engineering, Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei 10608, Taiwan
Funding
National Science and Technology Council