Toward Commercial-Scale Perovskite Solar Cells: The Role of ALD-SnO2 Buffer Layers in Performance and Stability
Source abstract
Abstract
Hybrid organic–inorganic perovskite solar cells (PSCs) have shown significant potential in photovoltaic applications due to their superior optoelectronic properties. However, the conventional electron transport layer (ETL) of C 60 in PSCs poses challenges such as incomplete coverage and metal diffusion, leading to reduced performance and stability. This work explores the efficacy of atomic layer deposition (ALD) of SnO 2 as an interlayer between C 60 and electrode to enhance the performance and stability of devices. Devices with varying SnO 2 thicknesses were fabricated, revealing that a 15 nm ALD-SnO 2 layer optimally improved the power conversion efficiency (PCE) to 23.85%, compared to the 22.86% achieved with a BCP layer. Moreover, the SnO 2 -based devices exhibited superior open-circuit voltage ( V OC ), short-circuit current density ( J SC ), and fill factor (FF). Modules (30 × 30 cm) with ALD-SnO 2 demonstrated notable enhancements in efficiency and uniformity, suggesting the potential for scalable commercial applications. Photoluminescence (PL) and electrochemical impedance spectroscopy (EIS) analyses confirmed the improved charge extraction and reduced recombination with the SnO 2 buffer layer. This research indicates that ALD-SnO 2 is a promising interlayer candidate for PSCs, providing a pathway toward higher efficiency and stability in perovskite solar technology.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · Conducting polymers and applications · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Chemistry and Chemical Engineering, Jiangxi University of Science and Technology, 156 Ke Jia Avenue, Ganzhou 341000, China
Department of Chemical and Environmental Engineering, University of Nottingham Ningbo China, Ningbo 315000, China
Key Laboratory of Flexible Electronics of Zhejiang Province, Ningbo Institute of Northwestern Polytechnical University, Ningbo 315100, China
Funding
National Natural Science Foundation of China · Natural Science Foundation of Jiangxi Province
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