High-Performance Uncooled Mid-Infrared Detector Based on a Polycrystalline PbSe/CdSe Heterojunction
Source abstract
Abstract
Developing high-performance, uncooled mid-wavelength infrared (MWIR) detectors is a challenging task due to the inherent physical properties of materials and manufacturing technologies. In this study, we designed and manufactured an uncooled polycrystalline PbSe/CdSe heterojunction photovoltaic (PV) detector through vapor physical deposition. The resulting 10 μm × 10 μm device exhibited a peak detectivity of 7.5 × 10 9 and 3 × 10 10 cm·Hz 1/2 ·W –1 at 298 and 220 K, respectively, under blackbody radiation. These values are comparable to those of typical PbSe photoconductive detectors fabricated through standard chemical bath deposition. Additionally, the sensitization-free process used to create these PbSe/CdSe PV detectors allows for high replicability and yield, making them promising candidates for low-cost, high-performance, uncooled MWIR focal plane array imaging in commercial applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Microelectronics, Dalian University of Technology, Dalian 116024, P. R. China
School of Electrical and Computer Engineering, University of Oklahoma, Norman, Oklahoma 73019, United States
Funding
Defense Advanced Research Projects Agency · Army Research Office · Dalian Science and Technology Innovation Fund · Fundamental Research Funds for the Central Universities
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