journal article·2022-08-03Open access

In-Depth Chemical and Optoelectronic Analysis of Triple-Cation Perovskite Thin Films by Combining XPS Profiling and PL Imaging

Stefania Cacovich, Pia Dally, Guillaume Vidon, Marie Legrand, Stéphanie Gbegnon, Jean Rousset, Jean-Baptiste Puel, Jean-François Guillemoles, Philip Schulz, Muriel Bouttemy, Arnaud Etcheberry

ACS Applied Materials & Interfaces· Volume 14· Issue 30

Abstract

The investigation of chemical and optoelectronic properties of halide perovskite layers and associated interfaces is crucial to harness the full potential of perovskite solar cells. Depth-profiling photoemission spectroscopy is a primary tool to study the chemical properties of halide perovskite layers at different scales from the surface to the bulk. The technique employs ionic argon beam thinning that provides accurate layer thicknesses. However, there is an urgent need to corroborate the reliability of data on chemical properties of halide perovskite thin films to better assess their stability. The present study addresses the question of the Ar+ sputtering thinning on the surface chemical composition and the optoelectronic properties of the triple-cation mixed-halide perovskite by combining X-ray photoemission spectroscopy (XPS) and photoluminescence (PL) spectroscopy. First, XPS profiling is performed by Ar+ beam sputtering on a half-cell: glass/FTO/c-TiO2/perovskite. The resulting profiles show a very homogeneous and reproducible element distribution until near the buried interface; therefore, the layer is considered as quasihomogeneous all over its thickness, and the sputtering process is stable. Second, we evaluated a set of thinned perovskite layers representative of selected steps along the profile by means of PL imaging optical measurements in both steady-state and transient regimes to assess possible perturbation of the optical properties from the surface to bulk. Obtained PL spectra inside the resulting craters show no peak shift nor phase segregation. Accordingly, the transient PL measurements do not reveal any changes of the surface recombination rate in the sputtered areas. This demonstrates that there is no cumulative effect of sputtering nor drastic chemical and optoelectronic modifications, validating the determination of the in-depth composition of the perovskite layer. Combining XPS profiling with PL characterization can be a precise tool to be applied for an extensive study of the multiple layers and mixed organic/inorganic interfaces of photovoltaic devices.
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Research context

OpenAlex topics: Perovskite Materials and Applications · Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

CNRS, Institut Photovoltaïque d’Île de France (IPVF), UMR 9006, 18 boulevard Thomas Gobert, 91120 Palaiseau, France

Institut Photovoltaïque d’Île de France (IPVF), 18 boulevard Thomas Gobert, 91120 Palaiseau, France

Institut Lavoisier de Versailles (ILV), Université de Versailles Saint-Quentin-en-Yvelines, Université Paris-Saclay, CNRS, UMR 8180, 45 avenue des Etats-Unis, 78035 Versailles CEDEX, France

EDF R&D, Institut Photovoltaïque d’Île de France (IPVF), 18 boulevard Thomas Gobert, 91120 Palaiseau, France

Funding

Agence Nationale de la Recherche · European Commission

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