DataVXACS Applied Materials & InterfacesPaper
journal article·2020-09-09

Enhanced Ferroelectric Properties and Insulator–Metal Transition-Induced Shift of Polarization-Voltage Hysteresis Loop in VOx-Capped Hf0.5Zr0.5O2 Thin Films

Yan Zhang, Zhen Fan, Dao Wang, Jiali Wang, Zhengmiao Zou, Yushan Li, Qiang Li, Ruiqiang Tao, Deyang Chen, Min Zeng, Xingsen Gao, Jiyan Dai, Guofu Zhou, Xubing Lu, Jun-Ming Liu

ACS Applied Materials & Interfaces· Volume 12· Issue 36
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Source abstract

Abstract

A capping layer is known to be critical for stabilizing the ferroelectric (FE) orthorhombic phase (o-phase) in a HfO2-based thin film. Here, vanadium oxide (VOx), a functional oxide exhibiting the insulator–metal transition, is used as a novel type of a capping layer for the Hf0.5Zr0.5O2 (HZO) thin film. It is demonstrated that the VOx capping layer (VCL) can enhance the FE properties of the HZO thin film comprehensively. Specifically, the HZO thin film with a VCL shows large remanent polarization (2Pr ≈36.9 μC/cm2), relatively small coercive field (Ec ≈1.09 MV/cm), high endurance (up to 109 cycles), and long retention (>105 seconds). The enhanced FE properties may be attributed to the VCL-induced stabilization of the FE o-phase and suppression of oxygen vacancies at the interface. Furthermore, the HZO thin film with a VCL exhibits a successive rightward shift of polarization-voltage (P-V) hysteresis loop as the temperature increases. This is well correlated with the insulator–metal transition in a VCL, which can modulate the interfacial built-in field and thus cause the P-V loop shift. It is therefore demonstrated that a VCL not only enhances the FE properties of HZO thin films but also provides a temperature degree of freedom to modulate the FE properties, which may open up a new pathway to develop HfO2-based FE memories with high performance and novel functionalities.
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China

Guangdong Provincial Key Laboratory of Optical Information Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China

Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China

National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou 510006, China

Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 21009, China

Funding

State Administration of Foreign Experts Affairs · Research Grants Council, University Grants Committee · Ministry of Education of the People's Republic of China · National Natural Science Foundation of China · Natural Science Foundation of Guangdong Province · South China Normal University · Guangdong Province · Science and Technology Program of Guangzhou · Guangdong Province Universities and Colleges Pearl River Scholar Funded Scheme · Guangdong Innovative Research Team Program · Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal University

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