Magnetization and Resistance Switchings Induced by Electric Field in Epitaxial Mn:ZnO/BiFeO3 Multiferroic Heterostructures at Room Temperature
Source abstract
Abstract
Electric field induced reversible switchings of the magnetization and resistance were achieved at room temperature in epitaxial Mn:ZnO(110)/BiFeO3(001) heterostructures. The observed modulation of magnetic moment is ∼500% accompanying with a coercive field varying from 43 to 300 Oe and a resistive switching ratio up to ∼10(4)% with the applied voltages of ±4 V. The switching mechanisms in magnetization and resistance are attributed to the ferroelectric polarization reversal of the BiFeO3 layer under applied electric fields, combined with the reversible change of oxygen vacancy concentration at the Mn:ZnO/BiFeO3 interface.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Multiferroics and related materials · Ferroelectric and Piezoelectric Materials · Magnetic and transport properties of perovskites and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, People’s Republic of China
Funding
Natural Science Foundation of Tianjin City · National Natural Science Foundation of China
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