journal article·2021-04-07

Scalable Van der Waals Two-Dimensional PtTe2 Layers Integrated onto Silicon for Efficient Near-to-Mid Infrared Photodetection

Mashiyat Sumaiya Shawkat, Shihab Bin Hafiz, Molla Manjurul Islam, Sohrab Alex Mofid, Mohammad M. Al Mahfuz, Aritra Biswas, Hee-Suk Chung, Emmanuel Okogbue, Tae-Jun Ko, Debashis Chanda, Tania Roy, Dong-Kyun Ko, Yeonwoong Jung

ACS Applied Materials & Interfaces· Volume 13· Issue 13
Publisher page

Abstract

In recent years, there has been increasing interest in leveraging two-dimensional (2D) van der Waals (vdW) crystals for infrared (IR) photodetection, exploiting their unusual optoelectrical properties. Some 2D vdW materials with small band gap energies such as graphene and black phosphorus have been explored as stand-alone IR responsive layers in photodetectors. However, the devices incorporating these IR-sensitive 2D layers often exhibited poor performances owing to their preparation issues such as limited scalability and air instability. Herein, we explored wafer-scale 2D platinum ditelluride (PtTe2) layers for near-to-mid IR photodetection by directly growing them onto silicon (Si) wafers. 2D PtTe2/Si heterojunctions exhibited wavelength- and intensity-dependent high photocurrents in a spectral range of ∼1–7 μm, significantly outperforming stand-alone 2D PtTe2 layers. The observed superiority is attributed to their excellent Schottky junction characteristics accompanying suppressed carrier recombination as well as optical absorbance competition between 2D PtTe2 layers and Si. The direct and scalable growth of 2D PtTe2 layers was further extended to demonstrate mechanically flexible IR photodetectors.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States

Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States

Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, United States

Department of Physics, University of Central Florida, Orlando, Florida 32816, United States

The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816, United States

Analytical Research Division, Korea Basic Science Institute, Jeonju 54907, South Korea

Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32826, United States

Funding

Air Force Research Laboratory · University of Central Florida · Korea Institute of Energy Technology Evaluation and Planning · Division of Electrical, Communications and Cyber Systems · Division of Civil, Mechanical and Manufacturing Innovation

References (41)

Show source-provided references
1. 10.1002/lpor.20190009810.1002/lpor.201900098 ↗
2. 10.1088/0034-4885/68/10/r0110.1088/0034-4885/68/10/r01 ↗
3. 10.1063/1.499732710.1063/1.4997327 ↗
4. 10.1016/s1350-4495(03)00163-410.1016/s1350-4495(03)00163-4 ↗
5. 10.1002/smll.20190134710.1002/smll.201901347 ↗
6. 10.1002/adom.20200170810.1002/adom.202001708 ↗
7. Yu, X. C.; Wang, Q. J. 2D Materials Based Mid-Infrared and Terahertz Optoelectronics, 2019 Asia Communications and Photonics Conference (ACP), 2–5 Nov, 2019; p 1.
8. 10.1038/nchem.158910.1038/nchem.1589 ↗
9. 10.1038/nphoton.2015.28210.1038/nphoton.2015.282 ↗
10. 10.1021/acsami.9b0900010.1021/acsami.9b09000 ↗
11. 10.1038/s41467-018-03436-010.1038/s41467-018-03436-0 ↗
12. 10.1038/s41699-018-0085-z10.1038/s41699-018-0085-z ↗
13. 10.1126/science.123554710.1126/science.1235547 ↗
14. 10.1038/nature1238510.1038/nature12385 ↗
15. 10.1039/c7mh00543a10.1039/c7mh00543a ↗
16. 10.1038/nature1068010.1038/nature10680 ↗
17. 10.1038/nature1145810.1038/nature11458 ↗
18. 10.1038/nphoton.2014.27110.1038/nphoton.2014.271 ↗
19. 10.1021/acsnano.8b0454010.1021/acsnano.8b04540 ↗
20. 10.1021/acsami.9b2183810.1021/acsami.9b21838 ↗
21. 10.1021/acs.nanolett.8b0058310.1021/acs.nanolett.8b00583 ↗
22. 10.1039/d0nr01845g10.1039/d0nr01845g ↗
23. 10.1103/physrevlett.124.03640210.1103/physrevlett.124.036402 ↗
24. 10.1021/acsami.0c0011610.1021/acsami.0c00116 ↗
25. 10.1038/s41467-017-00280-610.1038/s41467-017-00280-6 ↗
26. 10.1002/adfm.20180374610.1002/adfm.201803746 ↗
27. 10.1016/j.apmt.2020.10071810.1016/j.apmt.2020.100718 ↗
28. 10.1039/d0nr05670g10.1039/d0nr05670g ↗
29. 10.1088/2053-1583/ab8d8210.1088/2053-1583/ab8d82 ↗
30. 10.1002/adfm.20170650410.1002/adfm.201706504 ↗
31. 10.1039/c7nr02397a10.1039/c7nr02397a ↗
32. 10.1063/1.478998910.1063/1.4789989 ↗
33. 10.1039/c8nr04004d10.1039/c8nr04004d ↗
34. 10.1038/s41427-018-0035-410.1038/s41427-018-0035-4 ↗
35. 10.1063/1.299075310.1063/1.2990753 ↗
36. 10.1063/1.477337410.1063/1.4773374 ↗
37. 10.2478/s11772-013-0090-x10.2478/s11772-013-0090-x ↗
38. 10.3390/s13040505410.3390/s130405054 ↗
39. Dereniak E. · 1996
40. 10.1002/adma.20170715210.1002/adma.201707152 ↗
41. 10.1038/s41566-019-0362-110.1038/s41566-019-0362-1 ↗