Transfer of Epitaxial SrTiO3 Nanothick Layers Using Water-Soluble Sacrificial Perovskite Oxides
Source abstract
Abstract
The integration of functional thin film materials with adaptable properties is essential for the development of new paradigms in information technology. Among them, complex oxides with perovskite structures have huge potential based on the particularly vast diversity of physical properties. Here, we demonstrate the possibility of transferring perovskite oxide materials like SrTiO 3 onto a silicon substrate using an environmentally friendly process at the nanoscale by means of a water-soluble perovskite sacrificial layer, SrVO 3 . Based on in situ monitoring atomic force microscopy and photoemission studies, we reveal that the dissolution is initiated from a strontium-rich phase at the extreme surface of SrVO 3 . The nanothick SrTiO 3 -transferred layer onto silicon presents appropriate morphology and monocrystalline quality, providing a proof of concept for the integration and development of all-perovskite-oxide electronics or “oxitronics” onto any Si-based substrate.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Electronic and Structural Properties of Oxides · Ferroelectric and Piezoelectric Materials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Groupe d’Etude de la Matière Condensée (GEMaC), Université de Versailles Saint-Quentin en Yvelines, Université Paris-Saclay CNRS, 45 Avenue des Etats-Unis, 78035 Versailles, France
Institut Lavoisier de Versailles (ILV), Université de Versailles Saint-Quentin en Yvelines, Université Paris-Saclay CNRS, 45 Avenue des Etats-Unis, 78035 Versailles, France
Normandie Univ, ENSICAEN, UNICAEN, CNRS, CRISMAT, 14000 Caen, France
Funding
LabEx CHARMMMAT · POLYNASH
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