Effect of Band Bending in Photoactive MOF-Based Heterojunctions

Semiconductor/metal-organic framework (MOF) heterojunctions have demonstrated promising performance for the photoconversion of CO₂ into value-added chemicals. To further improve performance, we must understand better the factors which govern charge transfer across the heterojunction interface. However, the effects of interfacial electric fields, which can drive or hinder electron flow, are not commonly investigated in MOF-based heterojunctions. In this study, we highlight the importance of interfacial band bending using two carbon nitride/MOF heterojunctions with either Co-ZIF-L or Ti-MIL-125-NH₂. Direct measurement of the electronic structures using X-ray photoelectron spectroscopy (XPS), work function, valence band, and band gap measurements led to the construction of a simple band model at the heterojunction interface. This model, based on the heterojunction components and band bending, enabled us to rationalize the photocatalytic enhancements and losses observed in MOF-based heterojunctions. Using the insight gained from a promising band bending diagram, we developed a Type II carbon nitride/MOF heterojunction with a 2-fold enhanced CO₂ photoreduction activity compared to the physical mixture.