Fully Inorganic CsSnI₃-Based Solar Cells with >6% Efficiency and Enhanced Stability Enabled by Mixed Electron Transport Layer

Shaoyang Ma; Xiaoyu Gu; Aung KoKo Kyaw; Dong Hwan Wang; Shashank Priya; Tao Ye

doi:10.1021/acsami.0c16634

journal article·2021-01-13

Fully Inorganic CsSnI₃-Based Solar Cells with >6% Efficiency and Enhanced Stability Enabled by Mixed Electron Transport Layer

Shaoyang Ma, Xiaoyu Gu, Aung KoKo Kyaw, Dong Hwan Wang, Shashank Priya, Tao Ye

ACS Applied Materials & Interfaces· Volume 13· Issue 1

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Abstract

Fully inorganic black orthorhombic (B-γ) CsSnI3 has become a promising candidate for perovskite solar cell (PSC) thanks to its low toxicity and decently high theoretical power conversion efficiency (PCE). However, so far, the reported PCE of the B-γ CsSnI3 PSC is still not comparable with its lead-based or organotin-based counterparts. Herein, a mixed electron transport layer (ETL) composed of ZnO nanoparticles (NPs) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) is incorporated into inverted B-γ CsSnI3 PSCs. The mixed ETL exhibits the merits of both ZnO and PCBM. The highest PCE of 6.08% was recorded for the PSC with mixed ZnO-PCBM ETL, which is 34.2% higher than that of the device with plain PCBM ETL (PCE of 4.53%) and 28.8% superior to that of plain ZnO ETL-based device (PCE of 4.72%). Meanwhile, the mixed ZnO-PCBM ETL-based PSC retained 71% of its initial PCE under inert conditions at room temperature after 60 days of storage and maintained 67% PCE after 20 days of storage under ambient air at 30% relative humidity and room temperature.

Source: openalex_inverted_index · Quality: baseline

Research context

Nanomaterials Electronic materials

OpenAlex topics: Perovskite Materials and Applications · 2D Materials and Applications · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of All Optical Network and Advanced Telecommunication Network, Ministry of Education, Institute of Lightwave Technology, Beijing Jiaotong University, Beijing 100044, China

Guangdong University Key Laboratory for Advanced Quantum Dot Displays, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China

School of Integrative Engineering, Chung-Ang University, 84 Heukseok-ro, Dongjak-gu, Seoul 06974, Republic of Korea

Department of Materials Science and Engineering, Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, United States

Funding

Ministry of Education of the People's Republic of China · National Research Foundation of Korea · Division of Materials Research · Guangdong Basic and Applied Basic Research Foundation · Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting · High-level University Fund of Guangdong Province

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