Performance Limit of Ultrathin GaAs Transistors
Source abstract
Abstract
High-electron-mobility group III–V compounds have been regarded as a promising successor to silicon in next-generation field-effect transistors (FETs). Gallium arsenide (GaAs) is an outstanding member of the III–V family due to its advantage of both good n- and p-type device performance. Monolayer (ML) GaAs is the limit form of ultrathin GaAs. Here, a hydrogenated ML GaAs (GaAsH2) FET is simulated by ab initio quantum-transport methods. The n- and p-type ML GaAsH2 metal–oxide–semiconductor FETs (MOSFETs) can well satisfy the on-state current, delay time, power dissipation, and energy–delay product requirements of the International Technology Roadmap for Semiconductors until the gate length is scaled down to 3/4 and 3/5 nm for the high-performance/low-power applications, respectively. Therefore, ultrathin GaAs is a prominent channel candidate for devices in the post-Moore era. The p-type ML GaAsH2 MOSFETs with a 2% uniaxially compressive strain and the unstrained n-type counterparts have symmetrical performance for the high-performance application, making ultrathin GaAs applicable for complementary MOS integrated circuits.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
Department of Chemistry, The University of Hong Kong, Pokfulam 999077, P. R. China
Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China
Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing 100871, P. R. China
Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226000, P. R. China
State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P. R. China
Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, P. R. China
Funding
Peking University · Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China · MatCloud + high throughput materials simulation engine
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