DataVXACS Applied Materials & InterfacesPaper
journal article·2019-01-23

Graphdiyne-Doped P3CT-K as an Efficient Hole-Transport Layer for MAPbI3 Perovskite Solar Cells

Jiangsheng Li, Min Zhao, Chengjie Zhao, Hongmei Jian, Ning Wang, Lili Yao, Changshui Huang, Yingjie Zhao, Tonggang Jiu

ACS Applied Materials & Interfaces· Volume 11· Issue 3
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Source abstract

Abstract

Here we reported the doping of graphdiyne in P3CT-K in MAPbI3 perovskite solar cells as hole-transport materials. The doping could improve the surface wettability of P3CT-K, and the resulting perovskite morphology was improved with homogeneous coverage and reduced grain boundaries. Simultaneously, it increased the hole-extraction mobility and reduced the recombination as well as improved the performance of devices. Therefore, a high efficiency of 19.5% was achieved based on improved short-circuit current and fill factor. In addition, hysteresis of the J- V curve was also obviously reduced. This work paves the way for the development of highly efficient perovskite solar cells.
Source: europepmc · Quality: candidate unverified · Source record ↗

Research context

Electronic materials

OpenAlex topics: Perovskite Materials and Applications · Conducting polymers and applications · Organic Light-Emitting Diodes Research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Qingdao Institute of Bioenergy and Bioprocess Technology (QIBEBT), Chinese Academy of Sciences, Qingdao 266101, P. R. China

Qingdao University of Science and Technology, Qingdao 266042, P. R. China

Dalian Institute of Chemical Physics (DICP), Chinese Academy of Sciences, Dalian 116011, P. R. China

Funding

Youth Innovation Promotion Association of the Chinese Academy of Sciences · National Natural Science Foundation of China · Natural Science Foundation of Shandong Province · Qingdao Institute of Bioenergy and Bioprocess Technology · Dalian National Laboratory For Clean Energy

References (42)

Show source-provided references
1. 10.1002/adma.20170107310.1002/adma.201701073 ↗
2. 10.1039/C6EE03586H10.1039/C6EE03586H ↗
3. 10.1039/C7EE01931A10.1039/C7EE01931A ↗
4. 10.1002/adfm.20150424510.1002/adfm.201504245 ↗
5. 10.1021/acsami.5b0815710.1021/acsami.5b08157 ↗
6. 10.1038/ncomms834810.1038/ncomms8348 ↗
7. 10.1039/C5TA04712A10.1039/C5TA04712A ↗
8. 10.1002/aenm.20160066410.1002/aenm.201600664 ↗
9. 10.1021/acsami.7b1197710.1021/acsami.7b11977 ↗
10. Huang C. · Acta Phys. -Chim. Sin. · 2016 · 32 · 131410.3866/PKU.WHXB201605035 ↗
11. Chen Y. · Chin. Sci. Bull. · 2016 · 61 · 290110.1360/N972016-00483 ↗
12. Li Y. · Acta Polym. Sin. · 2015 · 2 · 147
13. 10.1002/adma.20160035410.1002/adma.201600354 ↗
14. 10.1016/j.nanoen.2016.02.05210.1016/j.nanoen.2016.02.052 ↗
15. 10.1002/adfm.20160157010.1002/adfm.201601570 ↗
16. 10.1039/c3cs60388a10.1039/c3cs60388a ↗
17. 10.1021/nn505723h10.1021/nn505723h ↗
18. 10.1039/C1DT11641J10.1039/C1DT11641J ↗
19. 10.1360/N032016-0021010.1360/N032016-00210 ↗
20. 10.1039/c1cc15129k10.1039/c1cc15129k ↗
21. 10.1039/b922733d10.1039/b922733d ↗
22. 10.1002/aenm.20140194310.1002/aenm.201401943 ↗
23. 10.1021/acs.nanolett.5b0078710.1021/acs.nanolett.5b00787 ↗
24. 10.1038/ncomms874710.1038/ncomms8747 ↗
25. 10.1002/aenm.20170114410.1002/aenm.201701144 ↗
26. 10.1039/C5EE03229F10.1039/C5EE03229F ↗
27. 10.1038/nenergy.2016.14210.1038/nenergy.2016.142 ↗
28. 10.1002/aenm.20170072210.1002/aenm.201700722 ↗
29. 10.1126/science.aad101510.1126/science.aad1015 ↗
30. 10.1002/aenm.20110015410.1002/aenm.201100154 ↗
31. 10.1002/aenm.20120018410.1002/aenm.201200184 ↗
32. 10.1021/am302408w10.1021/am302408w ↗
33. 10.1002/adfm.20050042010.1002/adfm.200500420 ↗
34. 10.1063/1.233537710.1063/1.2335377 ↗
35. 10.1021/am400197910.1021/am4001979 ↗
36. 10.1016/j.nanoen.2018.02.01410.1016/j.nanoen.2018.02.014 ↗
37. 10.1063/1.494858510.1063/1.4948585 ↗
38. 10.1021/acsami.5b0352510.1021/acsami.5b03525 ↗
39. 10.1021/nl404252e10.1021/nl404252e ↗
40. 10.1021/jz500059v10.1021/jz500059v ↗
41. 10.1002/aenm.20150027910.1002/aenm.201500279 ↗
42. 10.1002/aenm.20160157510.1002/aenm.201601575 ↗