High-Mobility ZnO Nanorod Field-Effect Transistors by Self-Alignment and Electrolyte-Gating

High mobility, solution-processed field-effect transistors are important building blocks for flexible electronics. Here we demonstrate the alignment of semiconducting, colloidal ZnO nanorods by a simple solvent evaporation technique and achieve high electron mobilities in field-effect transistors at low operating voltages by electrolyte-gating with ionic liquids. The degree of alignment varies with nanorod length, concentration and solvent evaporation rate. We find a strong dependence of electron mobility on the degree of alignment but less on the length of the nanorods. Maximum field-effect mobilities reach up to 9 cm(2) V(-1) s(-1) for optimal alignment. Because of the low process temperature (150 °C), ZnO nanorod thin films are suitable for application on flexible polymer substrates.