Electrolyte-Gated, High Mobility Inorganic Oxide Transistors from Printed Metal Halides

Inkjet printed and low voltage (≤1 V) driven field-effect transistors (FETs) are prepared from precursor-made In2O3 as the transistor channel and a composite solid polymer electrolyte (CSPE) as the gate dielectric. Printed halide precursors are annealed at different temperatures (300-500 °C); however, the devices that are heated to 400 °C demonstrate the best electrical performance including field-effect mobility as high as 126 cm(2) V(-1) s(-1) and subthreshold slope (68 mV/dec) close to the theoretical limit. These outstanding device characteristics in combination with ease of fabrication, moderate annealing temperatures and low voltage operation comprise an attractive set of parameters for battery compatible and portable electronics.