journal article·2015-06-03Open access

High Gain Hybrid Graphene–Organic Semiconductor Phototransistors

Everardus H. Huisman, Artem G. Shulga, Paul J. Zomer, Nikolaos Tombros, Davide Bartesaghi, Satria Zulkarnaen Bisri, Maria A. Loi, L. Jan Anton Koster, Bart J. van Wees

Abstract

Hybrid phototransistors of graphene and the organic semiconductor poly(3-hexylthiophene-2,5-diyl) (P3HT) are presented. Two types of phototransistors are demonstrated with a charge carrier transit time that differs by more than 6 orders of magnitude. High transit time devices are fabricated using a photoresist-free recipe to create large-area graphene transistors made out of graphene grown by chemical vapor deposition. Low transit time devices are fabricated out of mechanically exfoliated graphene on top of mechanically exfoliated hexagonal boron nitride using standard e-beam lithography. Responsivities exceeding 10(5) A/W are obtained for the low transit time devices.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Nanowire Synthesis and Applications · Graphene research and applications · GaN-based semiconductor devices and materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Zernike Institute for Advanced Materials, University of Gronigen, Nijenborgh 4, 9747 AG Groningen, The Netherlands

Stichting Fundamenteel Onderzoek der Materie, P.O. Box 3021, 3502 GA Utrecht, The Netherlands

Dutch Polymer Institute, P.O. Box 902, 5600 AX Eindhoven, The Netherlands

Funding

European Research Council · Stichting voor Fundamenteel Onderzoek der Materie · Zernike Institute for Advanced Materials, Rijksuniversiteit Groningen

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