Aqueous Solution-Deposited Gallium Oxide Dielectric for Low-Temperature, Low-Operating-Voltage Indium Oxide Thin-Film Transistors: A Facile Route to Green Oxide Electronics
Source abstract
Abstract
We reported a novel aqueous route to fabricate Ga2O3 dielectric at low temperature. The formation and properties of Ga2O3 were investigated by a wide range of characterization techniques, revealing that Ga2O3 films could effectively block leakage current even after annealing in air at 200 °C. Furthermore, all aqueous solution-processed In2O3/Ga2O3 TFTs fabricated at 200 and 250 °C showed mobilities of 1.0 and 4.1 cm2 V(-1) s(-1), on/off current ratio of ∼10(5), low operating voltages of 4 V, and negligible hysteresis. Our study represents a significant step toward the development of low-cost, low-temperature, and large-area green oxide electronics.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Ga2O3 and related materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
Division of Functional Materials and Nano Devices, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, China
Funding
Research Grants Council, University Grants Committee, Hong Kong · National Natural Science Foundation of China · Chinese University of Hong Kong
References (39)
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