Stable Subloop Behavior in Ferroelectric Si-Doped HfO2
Source abstract
Abstract
The recent demand for analogue devices for neuromorphic applications requires modulation of multiple nonvolatile states. Ferroelectricity with multiple polarization states enables neuromorphic applications with various architectures. However, deterministic control of ferroelectric polarization states with conventional ferroelectric materials has been met with accessibility issues. Here, we report unprecedented stable accessibility with robust stability of multiple polarization states in ferroelectric HfO2. Through the combination of conventional voltage measurements, hysteresis temperature dependence analysis, piezoelectric force microscopy, first-principles calculations, and Monte Carlo simulations, we suggest that the unprecedented stability of intermediate states in ferroelectric HfO2 is due to the small critical volume size for nucleation and the large activation energy for ferroelectric dipole flipping. This work demonstrates the potential of ferroelectric HfO2 for analogue device applications enabling neuromorphic computing.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Advanced Memory and Neural Computing · Ferroelectric and Piezoelectric Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
SK Hynix Incorporation, Icheon-si, Gyeonggi-do 17336, Korea
Lam Research Corporation, Fremont, California 94538, United States
Versum Materials Incorporation, Carlsbad, California 92011, United States
Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Korea
Funding
Ministry of Trade, Industry and Energy · Korea Semiconductor Research Consortium
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