journal article·2020-12-09

From Memristive Materials to Neural Networks

Tao Guo, Bai Sun, Shubham Ranjan, Yixuan Jiao, Lan Wei, Y. Norman Zhou, Yimin A. Wu

ACS Applied Materials & Interfaces· Volume 12· Issue 49
Publisher page

Abstract

The information technologies have been increasing exponentially following Moore's law over the past decades. This has fundamentally changed the ways of work and life. However, further improving data process efficiency is facing great challenges because of physical and architectural limitations. More powerful computational methodologies are crucial to fulfill the technology gap in the post-Moore's law period. The memristor exhibits promising prospects in information storage, high-performance computing, and artificial intelligence. Since the memristor was theoretically predicted by L. O. Chua in 1971 and experimentally confirmed by HP Laboratories in 2008, it has attracted great attention from worldwide researchers. The intrinsic properties of memristors, such as simple structure, low power consumption, compatibility with the complementary metal oxide-semiconductor (CMOS) process, and dual functionalities of the data storage and computation, demonstrate great prospects in many applications. In this review, we cover the memristor-relevant computing technologies, from basic materials to in-memory computing and future prospects. First, the materials and mechanisms in the memristor are discussed. Then, we present the development of the memristor in the domains of the synapse simulating, in-memory logic computing, deep neural networks (DNNs) and spiking neural networks (SNNs). Finally, the existent technology challenges and outlook of the state-of-art applications are proposed.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Neuroscience and Neural Engineering

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Mechanical and Mechatronics Engineering, Waterloo Institute of Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada

School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu, Sichuan 610031, China

Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada

Department of Chemical Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada

Funding

Canada Research Chairs · Government of Canada

References (100+)

Show source-provided references
1. 10.1038/530144a10.1038/530144a ↗
2. 10.1038/nnano.2015.2910.1038/nnano.2015.29 ↗
3. Thimbleby, H. Modes, WYSIWYG and the von Neumann bottleneck. IEE Colloquium on Formal Methods and Human-Computer Interaction: II; IET, 1988; p 1–4.
4. 10.1016/j.jcp.2008.01.04710.1016/j.jcp.2008.01.047 ↗
5. 10.1145/3079856.308024610.1145/3079856.3080246 ↗
6. Jeddeloh, J.; Keeth, B. Hybrid Memory Cube New DRAM Architecture Increases Density and Performance. 2012 Symposium on VLSI Technology (VLSIT); 2012.10.1109/VLSIT.2012.6242474 ↗
7. Lee, D. U.; Kim, K. W.; Kim, K. W.; Kim, H.; Kim, J. Y.; Park, Y. J.; Kim, J. H.; Kim, D. S.; Park, H. B.; Shin, J. W.; Cho, J. H.; Kwon, K. H.; Kim, M. J.; Lee, J.; Park, K. W.; Chung, B.; Hong, S. 25.2 A 1.2V 8Gb 8-Channel 128GB/s High-Bandwidth Memory (HBM) Stacked DRAM with Effective Microbump I/O Test Methods Using 29nm Process and TSV. 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC); 2014.10.1109/ISSCC.2014.6757501 ↗
8. 10.1002/adma.20150624310.1002/adma.201506243 ↗
9. 10.1145/216585.21658810.1145/216585.216588 ↗
10. 10.1109/MCSE.2017.2910.1109/MCSE.2017.29 ↗
11. 10.1109/TCT.1971.108333710.1109/TCT.1971.1083337 ↗
12. 10.1038/nature0693210.1038/nature06932 ↗
13. Andrew, A., Chua, L., Eds. Memristor networks; Springer Science & Business Media, 2013; p 5.
14. 10.1063/1.511553110.1063/1.5115531 ↗
15. 10.1002/adma.20090037510.1002/adma.200900375 ↗
16. 10.1002/adfm.20110288310.1002/adfm.201102883 ↗
17. 10.1103/PhysRev.97.153810.1103/PhysRev.97.1538 ↗
18. 10.1063/1.362447210.1063/1.3624472 ↗
19. 10.1155/2014/57816810.1155/2014/578168 ↗
20. 10.1109/16.70148810.1109/16.701488 ↗
21. 10.1038/s41565-018-0302-010.1038/s41565-018-0302-0 ↗
22. 10.1021/nl401283q10.1021/nl401283q ↗
23. 10.1039/C8CP03492C10.1039/C8CP03492C ↗
24. 10.1109/IEDM.2008.479667610.1109/IEDM.2008.4796676 ↗
25. 10.7567/JJAP.50.04DD1110.7567/JJAP.50.04DD11 ↗
26. 10.1038/ncomms940710.1038/ncomms9407 ↗
27. 10.1021/nl901874j10.1021/nl901874j ↗
28. 10.1016/j.nanoen.2020.10493810.1016/j.nanoen.2020.104938 ↗
29. 10.1002/aelm.20140005610.1002/aelm.201400056 ↗
30. 10.1016/S1369-7021(08)70119-610.1016/S1369-7021(08)70119-6 ↗
31. 10.1002/adma.20190226410.1002/adma.201902264 ↗
32. 10.1088/0957-4484/24/38/38400910.1088/0957-4484/24/38/384009 ↗
33. 10.1109/MCAS.2016.258367310.1109/MCAS.2016.2583673 ↗
34. 10.1038/nmat475610.1038/nmat4756 ↗
35. 10.3390/electronics403058610.3390/electronics4030586 ↗
36. 10.1039/C8FD00127H10.1039/C8FD00127H ↗
37. 10.1002/aisy.20190006810.1002/aisy.201900068 ↗
38. 10.1038/s41563-019-0291-x10.1038/s41563-019-0291-x ↗
39. 10.1021/acsami.7b0292110.1021/acsami.7b02921 ↗
40. 10.1063/1.170253010.1063/1.1702530 ↗
41. 10.1038/nnano.2009.45610.1038/nnano.2009.456 ↗
42. 10.1002/adfm.20170038410.1002/adfm.201700384 ↗
43. 10.1063/1.283485210.1063/1.2834852 ↗
44. 10.1063/1.293108710.1063/1.2931087 ↗
45. 10.1063/1.356791510.1063/1.3567915 ↗
46. 10.1038/nnano.2015.22110.1038/nnano.2015.221 ↗
47. 10.1016/j.tsf.2008.08.18410.1016/j.tsf.2008.08.184 ↗
48. 10.1063/1.493968210.1063/1.4939682 ↗
49. 10.1002/adma.20100187210.1002/adma.201001872 ↗
50. 10.1063/1.315947110.1063/1.3159471 ↗
51. Mikheev E. · Nat. Commun. · 2014 · 5 · 399010.1038/ncomms4990 ↗
52. 10.1002/adfm.20170532010.1002/adfm.201705320 ↗
53. 10.1063/1.184559810.1063/1.1845598 ↗
54. 10.1063/1.342836510.1063/1.3428365 ↗
55. 10.1038/ncomms338210.1038/ncomms3382 ↗
56. 10.1063/1.181258010.1063/1.1812580 ↗
57. 10.1002/adma.20190459910.1002/adma.201904599 ↗
58. 10.1038/nmat307010.1038/nmat3070 ↗
59. 10.1021/cm401737s10.1021/cm401737s ↗
60. 10.1021/nn100483a10.1021/nn100483a ↗
61. Schindler, C.; Meier, M.; Waser, R.; Kozicki, M. Resistive Switching in Ag-Ge-Se with Extremely Low Write Currents. 2007 Non-Volatile Memory Technology Symposium; 2007.10.1109/NVMT.2007.4389953 ↗
62. 10.1063/1.492108910.1063/1.4921089 ↗
63. 10.1063/1.32294210.1063/1.322942 ↗
64. 10.1016/j.jnoncrysol.2005.11.06510.1016/j.jnoncrysol.2005.11.065 ↗
65. 10.1063/1.359349410.1063/1.3593494 ↗
66. 10.1088/1361-6463/aa6ae710.1088/1361-6463/aa6ae7 ↗
67. Ciocchini N. · Sci. Rep. · 2016 · 6 · 2916210.1038/srep29162 ↗
68. 10.1088/1361-6463/aa593e10.1088/1361-6463/aa593e ↗
69. 10.1039/C5NR02536B10.1039/C5NR02536B ↗
70. 10.1016/j.pmatsci.2015.02.00210.1016/j.pmatsci.2015.02.002 ↗
71. 10.1038/s41586-018-0129-810.1038/s41586-018-0129-8 ↗
72. 10.1007/s12274-017-1895-610.1007/s12274-017-1895-6 ↗
73. 10.1038/s41565-020-0647-z10.1038/s41565-020-0647-z ↗
74. 10.1038/ncomms521410.1038/ncomms5214 ↗
75. 10.1038/s41563-018-0234-y10.1038/s41563-018-0234-y ↗
76. 10.1038/s41563-018-0248-510.1038/s41563-018-0248-5 ↗
77. 10.1002/adma.20170519310.1002/adma.201705193 ↗
78. 10.1016/j.carbon.2017.05.00410.1016/j.carbon.2017.05.004 ↗
79. 10.1039/C7TC00712D10.1039/C7TC00712D ↗
80. Santini C. A. · Nat. Commun. · 2015 · 6 · 860010.1038/ncomms9600 ↗
81. 10.1016/j.carbon.2018.04.04510.1016/j.carbon.2018.04.045 ↗
82. 10.1016/j.nanoen.2019.05.07910.1016/j.nanoen.2019.05.079 ↗
83. 10.1021/nl801774a10.1021/nl801774a ↗
84. 10.1126/science.118428910.1126/science.1184289 ↗
85. 10.1002/adma.20150312510.1002/adma.201503125 ↗
86. 10.1016/j.carbon.2006.02.03810.1016/j.carbon.2006.02.038 ↗
87. 10.1063/1.363335210.1063/1.3633352 ↗
88. 10.1063/1.327349610.1063/1.3273496 ↗
89. 10.1021/nn901263e10.1021/nn901263e ↗
90. 10.1016/j.carbon.2017.07.09010.1016/j.carbon.2017.07.090 ↗
91. 10.1021/nl101902k10.1021/nl101902k ↗
92. 10.1016/j.carbon.2011.04.07110.1016/j.carbon.2011.04.071 ↗
93. 10.3389/fmats.2020.0001710.3389/fmats.2020.00017 ↗
94. 10.1038/ncomms248110.1038/ncomms2481 ↗
95. 10.1007/BF0064766410.1007/BF00647664 ↗
96. 10.1038/nmat181710.1038/nmat1817 ↗
97. 10.1039/b9nr00233b10.1039/b9nr00233b ↗
98. 10.1038/nnano.2011.11910.1038/nnano.2011.119 ↗
99. 10.1021/acs.jpcb.8b0743110.1021/acs.jpcb.8b07431 ↗
100. 10.1021/jz100365410.1021/jz1003654 ↗