Ultrasensitive Hybrid MoS2–ZnCdSe Quantum Dot Photodetectors with High Gain
Source abstract
Abstract
Recently, two-dimensional (2D) materials, especially transition-metal dichalcogenides (TMDCs), have attracted extensive interest owing to their potential applications in optoelectronics. Here, we demonstrate a hybrid 2D–zero-dimensional (0D) photodetector, which consists of a single-layer or few-layer molybdenum disulfide (MoS2) thin film and a thin layer of core/shell zinc cadmium selenide/zinc sulfide (ZnCdSe/ZnS) colloidal quantum dots (QDs). It is worth mentioning that the photoresponsivity of the hybrid 2D–0D photodetector is 3 orders of magnitude larger than the TMDC photodetector (from 10 to 104 A W–1). The detectivity of the hybrid structure detector is up to 1012 Jones, and the gain is up to 105. Due to an effective energy transfer from the photoexcited QD sensitizing layer to MoS2 films, light absorption is enhanced and more excitons are generated. Thus, this hybrid 2D–0D photodetector takes advantage of high charge mobility in the MoS2 layer and efficient photon absorption/exciton generation in the QDs, which suggests their promising applications in the development of TMDC-based optoelectronic devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
Funding
Natural Science Foundation of Shanghai · Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China · Chinese Academy of Sciences
References (39)
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