Surface Passivation of MAPbBr3 Perovskite Single Crystals to Suppress Ion Migration and Enhance Photoelectronic Performance
Source abstract
Abstract
Recently, organometal halide perovskites (OHPs) have achieved significant advancement in photovoltaics, light-emitting diodes, X-ray detectors, and transistors. However, commercialization and practical applications were hindered by the notorious ion migration issue of OHPs. Here, we report a simple solvent-based surface passivation strategy with organic halide salts (methylammonium bromide (MABr) and phenylethylammonium bromide (PEABr)) to suppress the ion migration of MAPbBr3 single crystals. The surface passivation effect is evidenced by the stronger photoluminescence (PL) intensity and extended PL lifetime. Using the pulse voltage and continuous voltage current–voltage measurements, we found that single crystals with surface passivation showed negligible hysteresis on the surface due to the suppression of ion migration. As a result, the dark current stability of coplanar structure devices was significantly improved. Moreover, the vertical structure X-ray detectors with PEABr treatment exhibited a high sensitivity of 15 280 μC Gyair–1 cm–2 and a low detection limit of 87 nGyair s–1 under 5 V bias. The proposed technology would be a versatile tool to improve the performance of perovskite photoelectronic devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · Solid-state spectroscopy and crystallography · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
Funding
National Natural Science Foundation of China
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