journal article·2018-07-05

Sub-5 nm Monolayer Arsenene and Antimonene Transistors

Xiaotian Sun, Zhigang Song, Shiqi Liu, Yangyang Wang, Youyong Li, Weizhou Wang, Jing Lu

ACS Applied Materials & Interfaces· Volume 10· Issue 26
Publisher page

Abstract

Novel two-dimensional (2D) semiconductors arsenene and antimonene are promising channel materials for next-generation field effect transistors (FETs) because of the high carrier mobility and stability under ambient conditions. Stimulated by the recent experimental development of sub-5 nm 2D MoS2 FETs, we investigate the device performance of monolayer (ML) arsenene and antimonene in the sub-5 nm region by using accurate ab initio quantum transport simulation. We reveal that the optimized sub-5 nm double-gate (DG) ML arsenene and antimonene metal-oxide-semiconductor FETs (MOSFETs) can fulfill the low power requirements of the International Technology Roadmap for Semiconductors in 2028 until the gate length is scaled down to 4 nm. When the gate length is scaled down to 1 nm, the performances of the DG ML arsenene and antimonene MOSFETs are superior to that of the DG ML MoS2 MOSFETs in terms of the on-current. Therefore, 2D arsenene and antimonene are probably more suitable for ultrascaled FETs than 2D MoS2 in the post-silicon era.
Source: europepmc · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Graphene research and applications · 2D Materials and Applications · Advancements in Semiconductor Devices and Circuit Design

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

College of Chemistry and Chemical Engineering, and Henan Key Laboratory of Function-Oriented Porous Materials, Luoyang Normal University, Luoyang 471934, P. R. China

State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China

Nanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing 100094, P. R. China

Functional Nano & Soft Materials Laboratory (FUNSOM) and Collaborative Innovation Center of Suzhou Nano Science and Technology Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China

Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China

Funding

Ministry of Science and Technology of the People's Republic of China · Foundation of Henan Educational Committee · National Natural Science Foundation of China

References (50)

Show source-provided references
1. 10.1039/c7cs00125h10.1039/c7cs00125h ↗
2. 10.1002/anie.20170638910.1002/anie.201706389 ↗
3. 10.1002/adma.20160212810.1002/adma.201602128 ↗
4. Huo C. · J. Am. Chem. Soc. · 2016 · 56 · 5728
5. 10.1002/anie.20160959110.1002/anie.201609591 ↗
6. 10.1021/acsnano.7b0871410.1021/acsnano.7b08714 ↗
7. 10.1002/adma.20160540710.1002/adma.201605407 ↗
8. 10.1021/acs.nanolett.8b0042910.1021/acs.nanolett.8b00429 ↗
9. 10.1038/ncomms1335210.1038/ncomms13352 ↗
10. 10.1021/acs.chemmater.5b0494910.1021/acs.chemmater.5b04949 ↗
11. 10.1063/1.493928110.1063/1.4939281 ↗
12. 10.1021/acs.nanolett.7b0211110.1021/acs.nanolett.7b02111 ↗
13. 10.1002/anie.20141124610.1002/anie.201411246 ↗
14. 10.1038/natrevmats.2016.6110.1038/natrevmats.2016.61 ↗
15. 10.1038/ncomms956310.1038/ncomms9563 ↗
16. 10.1021/jacs.7b0497110.1021/jacs.7b04971 ↗
17. 10.1021/acs.chemmater.6b0359210.1021/acs.chemmater.6b03592 ↗
18. 10.1103/physrevb.94.20540910.1103/physrevb.94.205409 ↗
19. 10.1021/acsami.6b1469910.1021/acsami.6b14699 ↗
20. 10.1002/ange.20150756810.1002/ange.201507568 ↗
21. 10.1126/science.aah469810.1126/science.aah4698 ↗
22. 10.1126/science.aaj162810.1126/science.aaj1628 ↗
23. 10.1002/adma.20170252210.1002/adma.201702522 ↗
24. 10.1021/acs.nanolett.6b0399910.1021/acs.nanolett.6b03999 ↗
25. 10.1021/acs.nanolett.6b0457610.1021/acs.nanolett.6b04576 ↗
26. 10.1002/aelm.20160019110.1002/aelm.201600191 ↗
27. 10.1038/498443a10.1038/498443a ↗
28. 10.1016/j.mattod.2014.07.00810.1016/j.mattod.2014.07.008 ↗
29. 10.1038/ncomms1258510.1038/ncomms12585 ↗
30. 10.1039/c5nr01052g10.1039/c5nr01052g ↗
31. 10.1109/ted.2015.244303910.1109/ted.2015.2443039 ↗
32. International Technology Roadmap for Semiconductors. www.itrs.net. 2013.
33. 10.1103/physrevb.65.16540110.1103/physrevb.65.165401 ↗
34. 10.1088/0953-8984/14/11/30210.1088/0953-8984/14/11/302 ↗
35. Datta S. · 199510.1017/CBO9780511805776 ↗
36. 10.1103/physrevb.13.518810.1103/physrevb.13.5188 ↗
37. 10.1103/physrevlett.77.386510.1103/physrevlett.77.3865 ↗
38. 10.1007/s12274-017-1680-610.1007/s12274-017-1680-6 ↗
39. 10.1038/srep0085310.1038/srep00853 ↗
40. 10.1103/physrevlett.114.06300110.1103/physrevlett.114.063001 ↗
41. 10.1021/nl502553510.1021/nl5025535 ↗
42. 10.1021/acsami.6b1682610.1021/acsami.6b16826 ↗
43. 10.1021/acs.chemmater.5b0489910.1021/acs.chemmater.5b04899 ↗
44. Quhe, R. G.; Li, Q. H.; Zhang, Q. X.; Wang, Y. Y.; Zhang, H.; Li, J. Z.; Zhang, X. Y.; Chen, D. X.; Liu, K. H.; Ye, Y.; Dai, L.; Pan, F.; Lei, M.; Lu, J. Sub-5 nm Monolayer Black Phosphorus Transistors. 2018, submitted.
45. 10.1038/nnano.2010.17210.1038/nnano.2010.172 ↗
46. 10.1109/ted.2013.228459110.1109/ted.2013.2284591 ↗
47. 10.1038/s41565-017-0010-110.1038/s41565-017-0010-1 ↗
48. 10.1038/nnano.2014.1410.1038/nnano.2014.14 ↗
49. 10.1002/smll.20170147810.1002/smll.201701478 ↗
50. 10.1038/nature1538710.1038/nature15387 ↗