DataVXACS Applied Materials & InterfacesPaper
journal article·2016-10-05

200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors

Yun Wu, Xuming Zou, Menglong Sun, Zhengyi Cao, Xinran Wang, Shuai Huo, Jianjun Zhou, Yang Yang, Xinxin Yu, Yuechan Kong, Guanghui Yu, Lei Liao, Tangsheng Chen

ACS Applied Materials & Interfaces· Volume 8· Issue 39
Publisher page
Source abstract

Abstract

Graphene is a promising candidate in analog electronics with projected operation frequency well into the terahertz range. In contrast to the intrinsic cutoff frequency ( f T ) of 427 GHz, the maximum oscillation frequency ( f max ) of graphene device still remains at low level, which severely limits its application in radio frequency amplifiers. Here, we develop a novel transfer method for chemical vapor deposition graphene, which can prevent graphene from organic contamination during the fabrication process of the devices. Using a self-aligned gate deposition process, the graphene transistor with 60 nm gate length exhibits a record high f max of 106 and 200 GHz before and after de-embedding, respectively. This work defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra high frequency circuits.
Source: openalex_inverted_index · Quality: baseline

Research context

NanomaterialsElectronic materialsMaterials processing

OpenAlex topics: Graphene research and applications · Graphene and Nanomaterials Applications · Quantum and electron transport phenomena

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute, Nanjing 210016, China

Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China

National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China

Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China

Funding

Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China · Ten Thousand Talents Program for Young Talents

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