Epitaxial 2D SnSe₂/ 2D WSe₂ van der Waals Heterostructures

Kleopatra Emmanouil Aretouli; Dimitra Tsoutsou; Polychronis Tsipas; Jose Marquez-Velasco; Sigiava Aminalragia Giamini; Nicolaos Kelaidis; Vassilis Psycharis; Athanasios Dimoulas

doi:10.1021/acsami.6b02933

journal article·2016-09-07

Epitaxial 2D SnSe₂/ 2D WSe₂ van der Waals Heterostructures

Kleopatra Emmanouil Aretouli, Dimitra Tsoutsou, Polychronis Tsipas, Jose Marquez-Velasco, Sigiava Aminalragia Giamini, Nicolaos Kelaidis, Vassilis Psycharis, Athanasios Dimoulas

ACS Applied Materials & Interfaces· Volume 8· Issue 35

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Source abstract

Abstract

van der Waals heterostructures of 2D semiconductor materials can be used to realize a number of (opto)electronic devices including tunneling field effect devices (TFETs). It is shown in this work that high quality SnSe2/WSe2 vdW heterostructure can be grown by molecular beam epitaxy on AlN(0001)/Si(111) substrates using a Bi2Se3 buffer layer. A valence band offset of 0.8 eV matches the energy gap of SnSe2 in such a way that the VB edge of WSe2 and the CB edge of SnSe2 are lined up, making this materials combination suitable for (nearly) broken gap TFETs.

Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: 2D Materials and Applications · Nanowire Synthesis and Applications · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Nanoscience and Nanotechnology, National Center for Scientific Research “DEMOKRITOS”, 15310, Athens, Greece

University of Athens, Department of Physics, Section of Solid State Physics, 15684 Athens, Greece

National Technical University of Athens, Department of Physics, 15780 Athens, Greece

Funding

European Research Council

References (56)

Show source-provided references

1. 10.1021/acsnano.5b0555610.1021/acsnano.5b05556 ↗

2. 10.1021/nl501962c10.1021/nl501962c ↗

3. 10.1038/nnano.2014.1410.1038/nnano.2014.14 ↗

4. 10.1073/pnas.140543511110.1073/pnas.1405435111 ↗

5. 10.1038/nature1067910.1038/nature10679 ↗

6. 10.1109/TED.2010.207925010.1109/TED.2010.2079250 ↗

7. 10.1063/1.481740910.1063/1.4817409 ↗

8. 10.1063/1.491742210.1063/1.4917422 ↗

9. 10.1021/nn505649610.1021/nn5056496 ↗

10. 10.1109/JEDS.2015.239064310.1109/JEDS.2015.2390643 ↗

11. 10.1063/1.36959010.1063/1.369590 ↗

12. 10.1021/acs.nanolett.5b0179210.1021/acs.nanolett.5b01792 ↗

13. 10.1021/nn500431510.1021/nn5004315 ↗

14. 10.1002/adfm.20150378910.1002/adfm.201503789 ↗

15. 10.1063/1.485749510.1063/1.4857495 ↗

16. 10.1063/1.494139410.1063/1.4941394 ↗

17. 10.1016/0022-0248(91)91126-U10.1016/0022-0248(91)91126-U ↗

18. 10.1016/0039-6028(86)90471-110.1016/0039-6028(86)90471-1 ↗

19. Schlaf R. · J. Vac. Sci. Technol. · 1997 · 15 · 136510.1116/1.580543 ↗

20. 10.1088/2053-1583/2/3/03400410.1088/2053-1583/2/3/034004 ↗

21. 10.1038/ncomms918010.1038/ncomms9180 ↗

22. 10.1103/PhysRevLett.113.06610510.1103/PhysRevLett.113.066105 ↗

23. 10.1038/nnano.2013.27710.1038/nnano.2013.277 ↗

24. 10.1088/2053-1583/2/2/02400710.1088/2053-1583/2/2/024007 ↗

25. 10.1039/C4NR06874B10.1039/C4NR06874B ↗

26. 10.1016/j.mee.2015.04.11310.1016/j.mee.2015.04.113 ↗

27. 10.1021/acsami.5b0974310.1021/acsami.5b09743 ↗

28. 10.1016/0022-3697(86)90059-410.1016/0022-3697(86)90059-4 ↗

29. 10.1002/adma.20150167610.1002/adma.201501676 ↗

30. 10.1039/C5NR05989E10.1039/C5NR05989E ↗

31. 10.1016/j.tsf.2007.08.10010.1016/j.tsf.2007.08.100 ↗

32. 10.1039/C4CE01868K10.1039/C4CE01868K ↗

33. 10.1021/nn500431510.1021/nn5004315 ↗

34. Rigaku Corporation, X-Ray Reflectivity analysisProgram, Global Fit Version 2.05.2, (2008–2013.

35. 10.1103/PhysRevB.45.1324410.1103/PhysRevB.45.13244 ↗

36. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗

37. 10.1063/1.338234410.1063/1.3382344 ↗

38. 10.1103/PhysRevB.8.574710.1103/PhysRevB.8.5747 ↗

39. 10.1021/nn405719x10.1021/nn405719x ↗

40. 10.1088/0953-8984/27/39/39540110.1088/0953-8984/27/39/395401 ↗

41. 10.1021/nn502397x10.1021/nn502397x ↗

42. 10.1107/S002188988900691610.1107/S0021889889006916 ↗

43. 10.1016/0025-5408(79)90144-210.1016/0025-5408(79)90144-2 ↗

44. 10.1016/0921-5107(92)90033-610.1016/0921-5107(92)90033-6 ↗

45. 10.1007/BF0069499510.1007/BF00694995 ↗

46. 10.1016/j.matchemphys.2015.11.02610.1016/j.matchemphys.2015.11.026 ↗

47. Non-Tetrahedrally Bonded Elements and Binary Compounds I,Madelung, O.; Roossler, U.; Schulz, M., Eds.Springer:Berlin, Heidelberg, 1998; Vol.41C, Chapter 801, p1.

48. 10.1038/ncomms866610.1038/ncomms8666 ↗

49. 10.1103/PhysRevLett.44.162010.1103/PhysRevLett.44.1620 ↗

50. 10.1149/05807.0281ecst10.1149/05807.0281ecst ↗

51. 10.1103/PhysRevB.87.16540910.1103/PhysRevB.87.165409 ↗

52. 10.1021/nl504256y10.1021/nl504256y ↗

53. 10.1021/acsnano.5b0130110.1021/acsnano.5b01301 ↗

54. 10.1021/nl301702r10.1021/nl301702r ↗

55. 10.1063/1.165582910.1063/1.1655829 ↗

56. 10.1038/srep1087210.1038/srep10872 ↗