Research of Coulomb island induced by STM in PAR thin film

The electrical bistable property of the films made from single organic material (PAR) can be found on the sandwich structure under electric field. In the film, a coulomb island can be formed under high electric field applied by a STM tip. Through the currentvoltage measurement, coulomb blockade was observed at room temperature. The data are analyzed using the double barrier tunnel junction model. Parameters of the system were computed and been found accordant with theory. This method can contribute to the development of single electron transistor at room temperature.