The Application of the Scanning Probe Microscopy in the GaAs Semiconductor

Scanning probe microscopy (SPM),a new technology to analyses the solid surface,is developed in 1980's.But it has gotten more and more attention because of its highresolution,easyoperation,easy-extension.In 1986,G.Binning and H.Rohrer were awarded Nobel Prize because of their great ideas on SPM.In this article,the principle of scanning tunneling microscopy,atomic force microscopy,scanning capacitance microscopy,scanning thermal microscopy were described in detail.And the very located interaction between tip and surface which is used to prepare the nano-structure in the material is written in this article also.Especially the application of the analysis on semiconductor surface and the nanofabrication of semiconductor is emphasized in this article.We also point out the large prospect of SPM.