C_(60) field-effect transistors using a polystyrene gate dielectric layer
Source abstract
Abstract
A kind of organic field-effect transistor(OFET) was fabricated with polystyrene as the gate insulator and C60 as the active layer.Using the atomic force microscopic(AFM) images analyzed the surface morphology of polystyrene film and the C60 film.The device demonstrates good electric characteristics.The field effect mobility of device can reach 1.05cm2/V·s,and the on/off ratio is 9.4×105.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Analytical Chemistry and Sensors · Force Microscopy Techniques and Applications
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