AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range

P Sai; D B But; I Yahniuk; M Grabowski; M Sakowicz; P Kruszewski; P Prystawko; A Khachapuridze; K Nowakowski-Szkudlarek; J Przybytek; P Wiśniewski; B Stonio; M Słowikowski; S L Rumyantsev; W Knap; G Cywiński

doi:10.1088/1361-6641/aaf4a7

journal article·2019-02-01Open access

AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range

P Sai, D B But, I Yahniuk, M Grabowski, M Sakowicz, P Kruszewski, P Prystawko, A Khachapuridze, K Nowakowski-Szkudlarek, J Przybytek, P Wiśniewski, B Stonio, M Słowikowski, S L Rumyantsev, W Knap, G Cywiński

Semiconductor Science and Technology· Volume 34· Issue 2

Publisher page Open full text

Source abstract

Abstract

International audience

Only a short abstract or summary was supplied by the source.

Source: openalex_inverted_index · Quality: short

Research context

Electronic materials

OpenAlex topics: GaN-based semiconductor devices and materials · Terahertz technology and applications · Semiconductor Quantum Structures and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (30)

Show source-provided references

1. 10.1109/16.53680910.1109/16.536809 ↗

2. 10.2478/s11772-011-0033-310.2478/s11772-011-0033-3 ↗

3. 10.1063/1.480967210.1063/1.4809672 ↗

4. 10.1063/1.152585110.1063/1.1525851 ↗

5. 10.1063/1.179237710.1063/1.1792377 ↗

6. 10.1063/1.200539410.1063/1.2005394 ↗

7. 10.1063/1.239299910.1063/1.2392999 ↗

8. 10.1063/1.238814210.1063/1.2388142 ↗

9. 10.1063/1.235881610.1063/1.2358816 ↗

10. 10.1063/1.195257810.1063/1.1952578 ↗

11. 10.1063/1.294528610.1063/1.2945286 ↗

12. 10.1134/S106378260808018610.1134/S1063782608080186 ↗

13. 10.1063/1.219162810.1063/1.2191628 ↗

14. He Y · Appl. Phys. Express · 2017 · 10

15. 10.1063/1.293607710.1063/1.2936077 ↗

16. 10.1109/55.14493510.1109/55.144935 ↗

17. 10.1142/553910.1142/5539 ↗

18. 10.1557/PROC-483-1510.1557/PROC-483-15 ↗

19. 10.1049/el:2006245210.1049/el:20062452 ↗

20. 10.1109/IRMMW-THz.2017.806711810.1109/IRMMW-THz.2017.8067118 ↗

21. 10.1109/DRC.2010.555189510.1109/DRC.2010.5551895 ↗

22. 10.1063/1.219142110.1063/1.2191421 ↗

23. 10.1063/1.496657510.1063/1.4966575 ↗

24. 10.1063/1.487203110.1063/1.4872031 ↗

25. 10.1063/1.501139210.1063/1.5011392 ↗

26. 10.1007/s10762-017-0447-110.1007/s10762-017-0447-1 ↗

27. Petrosyan S · Zh. Eksp. Teor. Fiz. · 1989 · 69 · 1261

28. 10.1063/1.502339110.1063/1.5023391 ↗

29. 10.1063/1.363205810.1063/1.3632058 ↗

30. 10.1364/OE.19.00782710.1364/OE.19.007827 ↗