SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Mingming Hao, Gengming Zhang, xuecui zou, Xifan Xu et al.

Abstract Aluminum nitride (AlN) thin films on silicon substrates hold significant promise for CMOS-compatible piezoelectric, acoustic, and electronic devices. However, their crystallinity, stress state, surface morphology, and dielectric response are strongly affected by interfacial mismatch, thermal-expansion mismatch, film thickness, and post-deposition annealing. In this wor…

Yapeng Zhao, Chengyi Liu, You Li, Jinwei Hu et al.

Abstract To improve the threshold voltage (Vth) of the enhanced GaN HEMT device, mitigate the risk of false turn-on due to crosstalk between high-side and low-side HEMTs, and decouple the reverse turn-on voltage (VRT) from the gate-source voltage to minimize losses during reverse conduction, this paper introduces a decoupled dual-gate HEMT (DDG-HEMT) device. The DDG-HEMT featur…

Zhiqiang Li, Lingfeng Li, Zhengxiang Liao, Peng Dong et al.

Abstract The turn-on speed of GTO is a critical performance metric in nanosecond pulse applications. This work analyzes the super-injection effect in heterojunctions and proposes a fast-turn-on SiC heterogeneous gate turn-off (GTO) thyristor to overcome the insufficient response speed of conventional SiC P-GTOs. Through analysis of asymmetric electron and hole potential barrier…

Neslihan Ayarcı Kuruoğlu

Abstract Using admittance spectroscopy, the dispersive transport mobilities of electrons and holes were simultaneously obtained from the distinct carrier transit times (τₜ) in the MBE-grown GaAs/AlₓGa1₋xAs heterojunction-based solar cell device. The negative capacitance effect was attributed to the delayed response of injected carriers under forward-bias space-charge-limited co…

Yeong-Gwon Jeong, Chang-Hyeon Kim, Hyeong-Min Kim, Go-Eun Kim et al.

Abstract This study demonstrates that optimized O ₂ /Ar mixed plasma treatment effectively enhances both electrical performance and hydrogen resistance of IGZO thin-film transistors. At the optimal 4-minute condition, a subthreshold swing of 80 mV/dec and hysteresis of 0.07 V were achieved, with the FGA-induced threshold voltage shift (ΔV _TH ) suppressed from −5.34 V to −…

Siyi Dou, Xiaolong Zeng, Yu-Rong Liu, Kuiwei Gen

Abstract In the era of artificial intelligence and big data, the demand for real-time processing capabilities in visual systems is growing rapidly. However, traditional Von Neumann-architecture-based systems face storage and power consumption challenges, severely limiting their computational capacity and energy efficiency. Biomimetic optoelectronic synaptic devices can integrat…

nanchang liang, zhicheng liu, Guokun Ma, Wu Shiwen et al.

Abstract With advances in AI and the widespread adoption of NAND Flash technology imposing increasingly stringent performance requirements, conventional erase was unable to provide precise erasing in NAND Flash storage systems. This work proposed a novel cell-level erase scheme called Hole Pool (HP) erase by integrating the Cell-level Voltage (CV) scheme with the Source Accepto…

James C Gallagher, Nadeemullah A Mahadik, Robert E Stahlbush, Karl D Hobart et al.

Abstract Rapid wafer-scale defect identification and quantification are essential to achieve high yielding and reliable materials for device fabrication. Since defects are microscopic and the measurement scales are macroscopic, a quick, non-destructive automated process is needed to assess wafer quality. Although methods for wafer-scale defect visualization are well established…

Chang Hyeok Im, Kyul Ko, Ilho Myeong

Abstract This paper presents a compact model for gate-induced drain leakage (GIDL)- assisted erase transients in metal-gate 3D NAND flash memories. The proposed model incorporates key physical mechanisms, including hole injection, electron back-tunneling, and pure tunneling electron emission. The model is implemented in SPICE to support string-level simulations involving multip…

Soumiya K, Jyotismita Mishra, K P Pradhan

Abstract Gallium Nitride (GaN)-based normally-off HEMTs are increasingly being explored for high-power electronics due to their capability to withstand high frequency and high breakdown voltages and maintain reliable thermal performance. In this work, we demonstrate the effectiveness of reduced magnesium doping and gate-connected field plate integration in improving electric-fi…

Kusumkoli De, Ankit Udai, Anthony Aiello, Pallab Bhattacharya et al.

Abstract The photoluminescence (PL) efficiency of InGaN/GaN quantum dots (QDs) is often expected to improve with increasing quantum confinement; however, experimental observations frequently reveal non-monotonic behavior with respect to dot size and density. In this work, we present a comprehensive experimental study of three InGaN/GaN QD ensembles with identical composition bu…

Rajiv Gupta, Sunidhi Saxena, Chakresh Jain, Kalpna Tiwari et al.

Abstract We present comprehensive Technology Computer-Aided Design (TCAD) modeling results for a proton-irradiated, 300 μm thick Low Gain Avalanche Detector (LGAD) with a boron implant dose of 1.6 × 10¹³ cm⁻². We first assess the geometrical and doping parameters of the simulated LGAD by comparing its electrical and Transient Current Technique (TCT) characteristics with experim…

Keith Alan Alan Shore

Abstract The remarkable development of semiconductor lasers from short-lived cryogenically cooled laboratory-based curiosities to work-horse devices for a myriad of applications is surveyed. The thrust of the paper is to demonstrate the progress made in semiconductor design and applications been reported at the Semiconductor and Integrated Optoelectronics ( SIOE ) conference wh…

Tianxiang Yue, Qun Wei, Xiaofei Jia, Wenpeng Zhang

Abstract With semiconductor technology entering the nano node, short-channel effects such as hot-carrier injection and mobility degradation in traditional field-effect transistors are exponentially intensified, and the long-channel theory can no longer describe their thermal noise characteristics. In this paper, the fully depleted silicon-on-insulator (FD-SOI) metal–oxide–semic…

Neha Gupta, Lomash Chandra Acharya, Khoirom Johnson Singh, Mahipal Dargupally et al.

Abstract In-memory computing (IMC) architectures are regarded as a promising solution for energy-efficient edge applications. However, their computational accuracy and reliability are limited by reduced signal margins, nonlinear multiply-and-accumulate (MAC) operation, power constraints, and high sensitivity to process and device-level variability. In this work, we propose a bo…

John L Lyons, Darshana Wickramaratne

Abstract DX behavior limits n -type carrier concentrations in ultrawide-bandgap nitrides such as aluminum nitride (AlN) and cubic boron nitride ( c -BN). Instead of acting as effective-mass donors, DX centers capture two electrons, stabilizing a negative charge state that leads to self compensation. Silicon is the most effective n -type dopant in this class of materials; in AlN…

Su Yan, Chunpin Ren, Zhitao Huang, Xiaozhao Li et al.

Abstract Local lifetime control (LLC) via proton irradiation is a pivotal technique for power semiconductor devices, enabling the precise local reduction of minority carrier lifetime. For bidirectional blocking devices such as reverse-blocking integrated gate-commutated thyristors, double-sided LLC offers superior performance by directly suppressing bidirectional leakage curren…

Xinghuan Li, Zijing Xie, Xiaoyi Liu, Xiao Ma et al.

Abstract We propose a barrier layer etching combined with HfO ₂ /ZrO ₂ ferroelectric stacked gate dielectric structure to increase the threshold voltage of AlGaN/GaN HEMTs. The output current of the device proposed increases by 259% compared to achieving the same threshold voltage using a deep recessed gate scheme. The combined effects of barrier layer etching depth and g…

Shib Sankar Das, Subir Kumar Sarkar

Abstract Steep-slope transistors are essential for emerging ultra-low-power electronic systems operating at reduced supply voltages. However, conventional silicon tunnel field-effect transistors (TFETs) suffer from poor tunneling probability at the source–channel junction, which limits ON-state current. In this work, a Si ₀ . ₅ Ge ₀ . ₅ source graded-channel ferroel…

Junjie Guo, Chunyan Song, Hui Liao, Ningxuan Yang et al.

Abstract Oxygen vacancies play a crucial role in determining the electronic structure, thermoelectric, and optical properties of β -Ga ₂ O ₃ , while their influence is highly dependent on the crystallographic site due to the monoclinic structure with three inequivalent oxygen positions. In this work, we systematically investigate the site-dependent effects of oxygen vacan…