Study of GaN-based step-doping superjunction CAVET for further improvement of breakdown voltage and specific on-resistance
Source abstract
Abstract
Abstract A novel GaN-based step-doping superjunction current-aperture vertical electron transistor (SD-SJ CAVET) with SD n- and p-pillars is proposed and demonstrated by two-dimensional numerical simulations. Compared with the conventional GaN-based SJ CAVET, the greater doping concentration and more uniform electric field distributions can be realized in SD-SJ CAVET based on the special structure features, leading to the further improvement in both breakdown voltage ( BV ) and specific on-resistance ( R on A ). Optimized results for SD-SJ CAVET with three doping parts in n- and p-pillars show that the increase in BV is ∼30% and the reduction of the corresponding R on A can be improved from 10.6% to 31.1%, with N N,1 (the doping concentration of the part N 1 in n-pillar) decreasing from 1.5 × 10 16 to 0.5 × 10 16 cm −3 , compared with SJ CAVET under the same aspect ratio. And further reduction in R on A can be achieved by adding differently doped layers in n- and p-pillars without obvious deterioration in BV . This SD-SJ CAVET can be fabricated by selective area growth technology.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Silicon Carbide Semiconductor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (32)
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