Spin-dependent electrical hole extraction from low doped p-Si via the interface states in a Fe₃Si/p-Si structure

Spin accumulation effect in Fe 3 Si/p-Si structure with low boron doped silicon substrate was found. Calculated spin lifetimes are comparable with results reported earlier but for structures with highly doped semiconductors (SC) with or without a tunnel barrier introduced between the SC and ferromagnet (FM). Electrical characterization of a prepared Fe 3 Si/p-Si diode allowed the determination of possible reasons for the pronounced spin signal. Analysis of the forward bias I-V curve revealed a Schottky barrier at the Fe 3 Si/p-Si interface with a height of 0.57 eV.