Band parameters for GaAs and Si in the 24-k sdot p model

A 24-k ⋅ p model is used to compute the principal effective-mass parameters at Γ, X and L valleys in a direct-band-gap semiconductor (GaAs) as well as an indirect-band-gap semiconductor (Si). The values of the effective masses for electrons, heavy holes and light holes in the Γ, X and L valleys are in very good agreement with those reported in other publications. Satisfactory agreement with available experimental data is also obtained by this model. The Luttinger parameters and interband momentum matrix elements proposed in this work are consistent with the previous publications.