A modified analytical model for AlGaN/GaN FinFETs I – V characteristics
Source abstract
Abstract
Abstract In this paper, a high electron mobility transistor’s (HEMT) analytical model, which is based on the vertical operation of Schottky barrier gate, has been modified for the I − V characteristics of rectangular shaped AlGaN/GaN FinFETs having three-sided Schottky barrier gate operation. The proposed model includes the effect of the tri-gate structure on sheet carrier concentration ( n s ) of the device. A three dimensional Poisson equation is solved keeping in view, the device geometry and applied potentials, to get the effect of the side gates on n s . It is demonstrated that n s of a FinFET depletes relatively faster than its HEMT counterpart due to the extra fields caused by the side gates. Knowing bias dependent n s , FinFET I − V expressions are developed and tested on AlGaN/GaN FinFETs of varying gate lengths ( L g = 0.4 – 1.0 μ m) for the above threshold regime. A good agreement between the experimental and modeled characteristics is observed, which demonstrates the validity of the proposed model in predicting the DC characteristics of tri-gate AlGaN/GaN FinFETs.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Advancements in Semiconductor Devices and Circuit Design · Silicon Carbide Semiconductor Technologies
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References (26)
Show source-provided references
1. Strained p-channel MOSFET fabrication challenge and perspective for the 28-Nm technology node and beyond10.1149/06910.0223ecst ↗
2. Sub-15 nm gate-all-around field effect transistors on vertical silicon nanowires10.1016/j.sse.2016.12.008 ↗
3. Investigation of short channel effects in Bulk MOSFET and SOI FinFET at 20 nm node technology10.1109/INDICON.2015.7443263 ↗
4. Improved short channel effect control in bulk finFETs with vertical implantation to form self-aligned halo and punch-through stop pocket10.1109/LED.2015.2434825 ↗
5. Review paper: Low power SRAM cell using FinFET technology
6. Fin shape impact on FinFET leakage with application to multithreshold and ultralow-leakage FinFET design10.1109/TED.2014.2331190 ↗
7. Enhancement-mode operation of nanochannel array (NCA) AlGaN/GaN HEMTs10.1109/LED.2011.2179003 ↗
8. Sidewall dominated characteristics on fin-gate AlGaN/GaN MOS-channel-HEMTs10.1109/TED.2013.2278185 ↗
9. A review of GaN on SiC high electron-mobility power transistors and MMICs10.1109/TMTT.2012.2187535 ↗
10. A review of junction field effect transistors for high-temperature and high-power electronics10.1016/S0038-1101(98)00210-X ↗
11. Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics10.1088/0268-1242/28/12/125010 ↗
12. An improved model to assess temperature-dependent DC characteristics of submicron GaN HEMTs10.1007/s10825-018-1156-2 ↗
13. Modeling of GaN-based normally-off FinFET10.1109/LED.2014.2314700 ↗
14. Physical mechanism of fin-gate AlGaN/GaN MIS-HEMT: Vth model10.1109/WiPDA.2016.7799960 ↗
15. Compact physical models for AlGaN/GaN MIS-FinFET on threshold voltage and saturation current10.1109/TED.2018.2809517 ↗
16. Performance improvement and Sub-60 mV/decade swing in AlGaN/GaN FinFETs by simultaneous activation of 2DEG and sidewall MOS channels10.1109/TED.2017.2788920 ↗
17. Temperature dependent analytical model for current-voltage characteristics of AlGaN/GaN power HEMT10.1016/j.sse.2009.01.004 ↗
18. An analytical expression for sheet carrier concentration versus gate voltage for HEMT modelling10.1016/0038-1101(93)90140-L ↗
19. A new SPICE MOSFET level 3-like model of HEMT’s for circuit simulation10.1109/16.701480 ↗
20. Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression10.1088/1674-1056/24/6/067301 ↗
21. Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications10.1016/j.spmi.2014.10.038 ↗
22. Simulation and comparative analysis of the DC characteristics of submicron GaN HEMTs for use in CAD software10.1007/s10825-018-01292-1 ↗
23. Current stability in multi-mesa-channel AlGaN/GaN HEMTs10.1109/TED.2013.2266663 ↗
24. Nearly temperature-independent saturation drain current in a multi-mesa-channel algan/gan high electron mobility transistor10.1143/APEX.1.023001 ↗
25. Drain current stability and controllability of threshold voltage and subthreshold current in a multi-mesa-channel AlGaN/GaN high electron mobility transistor10.1143/JJAP.48.081002 ↗
26. Improved current stability in multi-mesa-channel AlGaN/GaN transistors10.1002/pssc.201300672 ↗