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journal article·2000-06-01

Study of a high-barrier-gate pseudomorphic transistor with a step-compositioned channel and bottomside delta-doped sheet structure

Kuan-Po Lin, Chih-Hung Yen, Wen-Lung Chang, Kuo-Hui Yu, Kun-Wei Lin, Wen-Chau Liu, Kuan-Po Lin, Chih-Hung Yen, Wen-Lung Chang, Kuo-Hui Yu, Kun-Wei Lin

Semiconductor Science and Technology· Volume 15· Issue 6
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Source abstract

Abstract

A newly designed high-barrier-gate Ga0.51In0.49P/InxGa1-xAs/GaAs pseudomorphic transistor with a step-compositioned channel (SC2) and bottomside delta-doped sheet (BD2S) structure has been fabricated successfully and studied. For a 1×100 µm2 studied device, a high gate-to-drain breakdown voltage over 30 V is found. In addition, an available output current density up to 826 mA mm-1 at a high gate voltage of 2.5 V, a maximum transconductance of 201 mS mm-1 with a very broad transconductance operation regime of 3 V of gate bias (565 mA mm-1 of drain current density) and a high dc gain ratio of 575 are obtained, simultaneously. Meanwhile, the maximum values of the unity current-gain cut-off frequency fT and oscillation frequency fmax are 16 and 34 GHz, respectively.
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Research context

Electronic materials

OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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