A new DC algorithm to extract MOSFET parameters
Source abstract
Abstract
A new DC extraction algorithm based on an improved MOS transistor current model has been proposed to determine the gate voltage dependence of transistor parameters from measured I-V characteristics. Experimental results obtained with long and short channel MOSFETS show that the parameters extracted using the algorithm are in good agreement with the theoretical values.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Analog and Mixed-Signal Circuit Design · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (8)
Show source-provided references
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