Small-signal AC response of hot electrons in narrow-gap semiconductors in the extreme quantum limit at low temperatures

The small-signal mobility of hot electrons in narrow-bandgap semiconductors in the presence of a quantizing magnetic field at low temperatures has been investigated. The model includes the band non-parabolicity, non-equipartition of phonons and Landau level broadening due to electron impurity interactions. The carrier distribution function is considered to be drifted Maxwellian and the electrons are assumed to occupy the lowest Landau subband. Numerical results are obtained for n-Hg0.8Cd0.2Te at low temperatures. The AC mobility is found to remain constant up to a certain frequency and then to decrease at higher frequencies. The phase lag between the drift velocity and the electric field increases with frequency.