Emission of collimated THz pulses from photo-excited semiconductors
Source abstract
Abstract
It is shown experimentally that surface-field terahertz (THz) emitters can produce well-collimated beams of THz radiation, making them useful devices for time-domain spectroscopy applications. Simulations of the carrier-dynamics are used to explain the mechanism of THz generation in InAs and GaAs, and it is shown that inter-valley scattering of electrons must be considered in order to fully describe THz emission from InAs. (Some figures in this article are in colour only in the electronic version) 1.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Terahertz technology and applications · Spectroscopy and Laser Applications · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (14)
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