Observation of infrared quenching of photocarriers in CdS using optical beam deflection
Source abstract
Abstract
It is demonstrated that the optical beam deflection technique could be used for photocarrier concentration monitoring. Infrared quenching in CdS was investigated by means of this technique and some discussion follows on the contributions of the photocarriers and phonons on the refractive index change in semiconductors.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Thermography and Photoacoustic Techniques · Advanced Semiconductor Detectors and Materials · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (8)
Show source-provided references
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